Two-Color Infrared Sensor on the PbTe: In Junction.

A lead telluride sensor was fabricated on the base of a p-n PbTe junction created on a PbTe single crystal grown by the Czochralski technique, followed by the diffusion of an indium donor impurity into a crystal. The capacitance-voltage and current-voltage characteristics of the sensor were measured over the temperature range from 80 K to 150 K. A prototype of a high-temperature mid-IR sensor, a PbTe diode, with a cut-off wavelength of 4 μm, operating at temperatures up to 150 K, was demonstrated for the first time.

Cathodoluminescence studies of electron irradiation effects in n-type ZnO.

The lifetime of non-equilibrium carriers in n-type unintentionally doped ZnO increases when the sample is exposed to the electron beam of a scanning electron microscope. This is observed by studying the ZnO cathodoluminescence (CL) spectra at different irradiation time durations and temperatures. We found that the decrease in the CL spectra's peak intensity is related to a thermo-activated energy barrier, determined by the calculated activation energy value of 259 ± 30 meV.

Electrically pumped waveguide lasing from ZnO nanowires.

Ultraviolet semiconductor lasers are widely used for applications in photonics, information storage, biology and medical therapeutics. Although the performance of gallium nitride ultraviolet lasers has improved significantly over the past decade, demand for lower costs, higher powers and shorter wavelengths has motivated interest in zinc oxide (ZnO), which has a wide direct bandgap and a large exciton binding energy. ZnO-based random lasing has been demonstrated with both optical and electrical pumping, but random lasers suffer from reduced output powers, unstable emission spectra and beam divergence.

Room-Temperature, Electric Field-Induced Creation of Stable Devices in CulnSe2 Crystals.

Multiple-junction structures were formed, on a microscopic scale, at room temperature, by the application of a strong electric field across originally homogeneous crystals of the ternary chalcopyrite semiconductor CulnSe(2). After removal of the electric field, the structures were examined with electron beam-induced current microscopy and their current-voltage characteristics were measured. Bipolar transistor action was observed, indicating that sharp bulk junctions can form in this way at low ambient temperatures.