Tuning Gate Potential Profiles and Current-Voltage Characteristics of Polymer Electrolyte-Gated Transistors by Capacitance Engineering.

We demonstrate that the transfer characteristics of electrolyte-gated transistors (EGTs) with polythiophene semiconductor channels are a strong function of gate/electrolyte interfacial contact area, i.e., gate size.

LEGO-like Assembly of Fibrous Modules for Display Textiles.

Due to their promising advantages over classical rigid devices, the development of display textiles has exciting potential for various fields, including sensor technology, healthcare, and communication. To realize display textiles, it is necessary to prepare light-emitting building blocks at the fiber level and then weave or knit them to form the desired textile structures. However, from a practical viewpoint, it is difficult to continuously weave functional fibers containing light-emitting devices using conventional textile technologies.

Tuning Threshold Voltage of Electrolyte-Gated Transistors by Binary Ion Doping.

Electrolyte-gated transistors (EGTs) operating at low voltages have attracted significant attention in widespread applications, including neuromorphic devices, nonvolatile memories, chemical/biosensors, and printed electronics. To increase the practicality of the EGTs in electronic circuits, systematic control of threshold voltage (), which determines the power consumption and noise margin of the circuits, is essential. In this study, we present a simple strategy for systematically tuning to almost half of the operating potential range of the EGT by controlling the electrochemical doping of electrolyte ions into organic p-type semiconductors.

Thermostable Ion Gels for High-Temperature Operation of Electrolyte-Gated Transistors.

High-temperature durability is critical for application of organic materials in electronic devices that operate in harsh environments. In this work, thermostable physically cross-linked polymer electrolytes, or thermostable physical ion gels, were successfully developed using crystallization-induced phase separation of semicrystalline polyamides (PAs) in an ionic liquid (IL). In these ion gels, phase-separated PA crystals act as network junctions and enable the ion gels to maintain their mechanical integrity up to 180 °C.

Ultrahigh-Mobility and Solution-Processed Inorganic P-Channel Thin-Film Transistors Based on a Transition-Metal Halide Semiconductor.

The development of p-channel devices with comparable electrical performances to their n-channel counterparts has been delayed due to the lack of p-type semiconductor materials and device optimization. In this present work, we successfully demonstrated p-channel inorganic thin-film transistors (TFTs) with high hole mobilities similar to the values of n-channel devices. To boost the device performance, the solution-processed copper iodide (CuI) semiconductor was gated by a solid polymer electrolyte.

Sub-2 V, Transfer-Stamped Organic/Inorganic Complementary Inverters Based on Electrolyte-Gated Transistors.

Organic/inorganic hybrid complementary inverters operating at low voltages (1 V or less) were fabricated by transfer-stamping organic p-type poly(3-hexylthiophene) (P3HT) and inorganic n-type zinc oxide (ZnO) electrolyte-gated transistors (EGTs). A semicrystalline homopolymer-based gel electrolyte, or an ionogel, was also transfer-stamped on the semiconductors for use as a high-capacitance gate insulator. For the ionogel stamping, the thermoreversible crystallization of phase-separated homopolymer crystals, which act as network cross-links, was employed to improve the contact between the gel and the semiconductor channel.