Negative Fermi-Level Pinning Effect of Metal/n-GaAs(001) Junction Induced by a Graphene Interlayer.

It is demonstrated that the electric dipole layer due to the overlapping of electron wave functions at the metal/graphene contact results in a negative Fermi-level pinning effect on the region of the GaAs surface with low interface-trap density in the metal/graphene/n-GaAs(001) junction. The graphene interlayer plays the role of a diffusion barrier, preventing the atomic intermixing at the interface and preserving the low interface-trap density region. The negative Fermi-level pinning effect is supported by the decrease of the Schottky barrier with the increase of the metal work function.

Highly-Sensitive Thin Film THz Detector Based on Edge Metal-Semiconductor-Metal Junction.

Terahertz (THz) detectors have been extensively studied for various applications such as security, wireless communication, and medical imaging. In case of metal-insulator-metal (MIM) tunnel junction THz detector, a small junction area is desirable because the detector response time can be shortened by reducing it. An edge metal-semiconductor-metal (EMSM) junction has been developed with a small junction area controlled precisely by the thicknesses of metal and semiconductor films.