Metabolic syndrome (MetS) is a cluster of interrelated risk factors, including insulin resistance, hypertension, dyslipidemia, and visceral adiposity, all of which contribute to kidney microvascular injury and the progression of chronic kidney disease (CKD). However, the specific impact of each component of MetS on kidney microcirculation remains unclear. Given the increasing prevalence of obesity, understanding how visceral fat-particularly fat surrounding the kidneys-affects kidney microcirculation is critical.
View Article and Find Full Text PDFDark current in optical sensors has been one of their issues. The performance of these sensors can be improved by reducing their dark current. In this study, we investigated UV sensors based on ZnO nanorods (ZNRs), in particular, their current-voltage characteristics, response and recovery times, on-off current ratio, and responsivity as a function of the device process conditions.
View Article and Find Full Text PDFIn this study, we investigated the operational characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by applying the copper-filled trench and via structures for improved heat dissipation. Therefore, we used a basic T-gate HEMT device to construct the thermal structures. To identify the heat flow across the device structure, a thermal conductivity model and the heat transfer properties corresponding to the GaN, SiC, and Cu materials were applied.
View Article and Find Full Text PDFCombustible gases, such as CH and CO, directly or indirectly affect the human body. Thus, leakage detection of combustible gases is essential for various industrial sites and daily life. Many types of gas sensors are used to identify these combustible gases, but since gas sensors generally have low selectivity among gases, coupling issues often arise which adversely affect gas detection accuracy.
View Article and Find Full Text PDFThis study investigated DC characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) considering self-heating effect (SHE) with basic T-gate (BT), drain-side extended T-gate (DSET), and source-bridge FP (SBFP) structures. We analyzed threshold voltage, transconductance, drain saturation current, and breakdown voltage of each structure for device optimization. Experimental data were initially matched with simulated data for the BT structure, then DC characteristics were compared with the drift-diffusion, coupled drift-diffusion and self-heating models for basic T-gate HEMT devices.
View Article and Find Full Text PDFWe investigate DC characteristics of AlGaN/GaN high-electron mobility transistors by using a source-bridged field plate and additional bottom plate (BP) structure. The analysis of experimental data was performed with a two-dimensional simulator. Source connected BP structure stabilized threshold voltage and transconductance regardless of various drain voltages.
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