A transparent p-type semiconductor designed a polarizability-enhanced strongly correlated insulator oxide matrix.

Electron-transporting transparent conducting oxides (TCOs) are a commercial reality, however, hole-transporting counterparts are far more challenging because of limited material design. Here, we propose a strategy for enhancing the hole conductivity without deteriorating the band gap () and workfunction () by Cu incorporation in a strongly correlated NiWO insulator. The optimal Cu-doped NiWO (CuNiWO) exhibits a resistivity reduction of ∼10 times NiWO as well as band-like charge transport with the hole mobility approaching 7 cm V s at 200 K, a deep of 5.

Crystalline Ge quantum dots embedded in SiO2 matrix synthesized by plasma immersion ion implantation.

A new plasma process, i.e. a combination of plasma immersion ion implantation and deposition (PIII&D) and high power impulse magnetron sputtering (HiPIMS), was developed to implant non-gaseous ions into material surfaces.