Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating method.

A reduced graphene oxide (RGO)-based transparent electronic memory cell with multi-level resistive switching (RS) was successfully realized by a dip-coating method. Using ITO/RGO/ITO structures, the memory device exhibited a transmittance above 80% (including the substrate) in the visible region and multi-level RS behavior in the 00, 01, 10, and 11 states by varying the pulse height from 2 V to 7 V. In the reliability test, the device exhibited a good endurance of over 10(5) cycles and a long data retention of over 10(5) s at 85°C in each state.

Transparent conductive oxide films mixed with gallium oxide nanoparticle/single-walled carbon nanotube layer for deep ultraviolet light-emitting diodes.

We propose a transparent conductive oxide electrode scheme of gallium oxide nanoparticle mixed with a single-walled carbon nanotube (Ga2O3 NP/SWNT) layer for deep ultraviolet light-emitting diodes using spin and dipping methods. We investigated the electrical, optical and morphological properties of the Ga2O3 NP/SWNT layers by increasing the thickness of SWNTs via multiple dipping processes. Compared with the undoped Ga2O3 films (current level 9.