Mechanically robust textile-based strain and pressure multimodal sensors using metal nanowire/polymer conducting fibers.

Recently, multifunctional textile-based sensory systems have attracted a lot of attention because of the growing demand for wearable electronics performing real-time monitoring of various body signals and movements. In particular, textile-based physical sensors often require multimodal sensing capabilities to accurately detect and identify multiple mixed stimuli simultaneously. Here, we demonstrate a textile-based strain/pressure multimodal sensor using high- poly(vinylidene fluoride)-co-hexafluoropropylene ion-gel film and silver nanowire/poly(3,4-ethylenedioxythiophene):polystyrene sulfonate-coated conducting fibers.

Highly Sensitive Textile-Based Capacitive Pressure Sensors Using PVDF-HFP/Ionic Liquid Composite Films.

Textile-based pressure sensors have garnered considerable interest in electronic textiles due to their diverse applications, including human-machine interface and healthcare monitoring systems. We studied a textile-based capacitive pressure sensor array using a poly(vinylidene fluoride)-co-hexafluoropropylene (PVDF-HFP)/ionic liquid (IL) composite film. By constructing a capacitor structure with Ag-plated conductive fiber electrodes that are embedded in fabrics, a capacitive pressure sensor showing high sensitivity, good operation stability, and a wide sensing range could be created.

In-Plane Amorphous Oxide Ionotronic Devices and Circuits with Photochemically Enabled Favorable Interfaces.

Here, we demonstrate a side-gated in-plane structure of solution-processed amorphous oxide semiconductor ionotronic devices and logic circuits enabled by ion gel gate dielectrics with a monolithically integrated nanoscale passivation architecture. The large capacitance of the electric double layer (EDL) in the ion gel allows a device structure to be a side gate geometry, forming an in-plane structured amorphous In-Ga-Zn-O (-IGZO) ionotronic transistor, which can be translated into a simplified logic gate configuration with a low operation voltage. Particularly, the monolithic passivation of the coplanar electrodes offers advantages over conventional inhomogeneous passivation, mitigating unintentional parasitic leakage current through the ion gel dielectric layer.