Tuning the Polarity of MoTe FETs by Varying the Channel Thickness for Gas-Sensing Applications.

In this study, electrical characteristics of MoTe field-effect transistors (FETs) are investigated as a function of channel thickness. The conductivity type in FETs, fabricated from exfoliated MoTe crystals, switched from p-type to ambipolar to n-type conduction with increasing MoTe channel thickness from 10.6 nm to 56.

Automated Mechanical Exfoliation of MoS and MoTe Layers for 2D Materials Applications.

An automated technique is presented for mechanically exfoliating single-layer and few-layer transition metal dichalcogenides using controlled shear and normal forces imposed by a parallel plate rheometer. A thin sample that is removed from bulk MoS or MoTe is initially attached to the movable upper fixture of the rheometer using blue dicing tape while the lower base plate also has the same tape to capture and exfoliate samples when the two plates are brought into contact then separated. A step-and-repeat exfoliation process is initiated using a preprogrammed contact force and liftoff speed.

Control of polarity in multilayer MoTe field-effect transistors by channel thickness.

In this study, electronic properties of field-effect transistors (FETs) fabricated from exfoliated MoTe single crystals are investigated as a function of channel thickness. The conductivity type in FETs gradually changes from n-type for thick MoTe layers (above ≈ 65 nm) to ambipolar behavior for intermediate MoTe thickness (between ≈ 60 and 15 nm) to p- type for thin layers (below ≈ 10 nm). The n-type behavior in quasi-bulk MoTe is attributed to doping with chlorine atoms from the TeCl transport agent used for the chemical vapor transport (CVT) growth of MoTe.

Electronic Characteristics of MoSe and MoTe for Nanoelectronic Applications.

Single-crystalline MoSe and MoTe platelets were grown by Chemical Vapor Transport (CVT), followed by exfoliation, device fabrication, optical and electrical characterization. We observed that for the field-effect-transistor (FET) channel thickness in range of 5.5 nm to 8.