Reduced dopant-induced scattering in remote charge-transfer-doped MoS field-effect transistors.

Efficient doping for modulating electrical properties of two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductors is essential for meeting the versatile requirements for future electronic and optoelectronic devices. Because doping of semiconductors, including TMDCs, typically involves generation of charged dopants that hinder charge transport, tackling Coulomb scattering induced by the externally introduced dopants remains a key challenge in achieving ultrahigh mobility 2D semiconductor systems. In this study, we demonstrated remote charge transfer doping by simply inserting a hexagonal boron nitride layer between MoS and solution-deposited n-type dopants, benzyl viologen.

Mechanochemistry-driven engineering of 0D/3D heterostructure for designing highly luminescent Cs-Pb-Br perovskites.

Embedding metal-halide perovskite particles within an insulating host matrix has proven to be an effective strategy for revealing the outstanding luminescence properties of perovskites as an emerging class of light emitters. Particularly, unexpected bright green emission observed in a nominally pure zero-dimensional cesium-lead-bromide perovskite (CsPbBr) has triggered intensive research in better understanding the serendipitous incorporation of emissive guest species within the CsPbBr host. However, a limited controllability over such heterostructural configurations in conventional solution-based synthesis methods has limited the degree of freedom in designing synthesis routes for accessing different structural and compositional configurations of these host-guest species.

Channel-Length-Modulated Avalanche Multiplication in Ambipolar WSe Field-Effect Transistors.

Recently there has been growing interest in avalanche multiplication in two-dimensional (2D) materials and device applications such as avalanche photodetectors and transistors. Previous studies have mainly utilized unipolar semiconductors as the active material and focused on developing high-performance devices. However, fundamental analysis of the multiplication process, particularly in ambipolar materials, is required to establish high-performance electronic devices and emerging architectures.

Proton irradiation effects on mechanochemically synthesized and flash-evaporated hybrid organic-inorganic lead halide perovskites.

A hybrid organic-inorganic halide perovskite is a promising material for developing efficient solar cell devices, with potential applications in space science. In this study, we synthesized methylammonium lead iodide (MAPbI) perovskites via two methods: mechanochemical synthesis and flash evaporation. We irradiated these perovskites with highly energetic 10 MeV proton-beam doses of 10, 10, 10, and 4 × 10protons cmand examined the proton irradiation effects on the physical properties of MAPbIperovskites.

Molecular Dopant-Dependent Charge Transport in Surface-Charge-Transfer-Doped Tungsten Diselenide Field Effect Transistors.

The controllability of carrier density and major carrier type of transition metal dichalcogenides(TMDCs) is critical for electronic and optoelectronic device applications. To utilize doping in TMDC devices, it is important to understand the role of dopants in charge transport properties of TMDCs. Here, the effects of molecular doping on the charge transport properties of tungsten diselenide (WSe ) are investigated using three p-type molecular dopants, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F -TCNQ), tris(4-bromophenyl)ammoniumyl hexachloroantimonate (magic blue), and molybdenum tris(1,2-bis(trifluoromethyl)ethane-1,2-dithiolene) (Mo(tfd-COCF ) ).

Crystallinity-dependent device characteristics of polycrystalline 2D n = 4 Ruddlesden-Popper perovskite photodetectors.

Ruddlesden-Popper (RP) perovskites have attracted a lot of attention as the active layer for optoelectronic devices due to their excellent photophysical properties and environmental stability. Especially, local structural properties of RP perovskites have shown to play important roles in determining the performance of optoelectronic devices. Here, we report the photodetector performance variation depending on the crystallinity of n = 4 two-dimensional (2D) RP perovskite polycrystalline films.