Enhancing the Resistive Switching Properties of Transparent HfO-Based Memristor Devices for Reliable Gasistor Applications.

We present a transparent memristor with a rough-surface (RS) bottom electrode (BE) with enhanced performance and reliability for a gasistor, which is a gas sensor plus a memristor, and its application in this paper. The transparent memristor, with an RS BE, exhibited low forming voltages (0.8 V) and a stable resistive switching behavior, with high endurance and an on/off ratio of about 125.

Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications.

Resistive-switching-based memory devices meet most of the requirements for use in next-generation information and communication technology applications, including standalone memory devices, neuromorphic hardware, and embedded sensing devices with on-chip storage, due to their low cost, excellent memory retention, compatibility with 3D integration, in-memory computing capabilities, and ease of fabrication. Electrochemical synthesis is the most widespread technique for the fabrication of state-of-the-art memory devices. The present review article summarizes the electrochemical approaches that have been proposed for the fabrication of switching, memristor, and memristive devices for memory storage, neuromorphic computing, and sensing applications, highlighting their various advantages and performance metrics.

Thickness Optimization of Charge Transport Layers on Perovskite Solar Cells for Aerospace Applications.

In aerospace applications, SiO deposition on perovskite solar cells makes them more stable. However, the reflectance of the light changes and the current density decreases can lower the efficiency of the solar cell. The thickness of the perovskite material, ETL, and HTL must be re-optimized, and testing the number of cases experimentally takes a long time and costs a lot of money.

Highly Sensitive Oxygen Sensing Characteristics Observed in IGZO Based Gasistor in a Mixed Gas Ambient at Room Temperature.

Oxygen (O) sensing in trace amounts and mixed gas is essential in many types of industries. Semiconductor sensors have proven to be invaluable tools for the O measurements in a wide concentration range, but the sensors are only able to quantify O in a concentration range of subppm, thus far, especially in mixed gas. We present in this paper a new concept for O sensing with incomparable sensitivity using IGZO-films with oxygen vacancy-based conducting filaments (CFs).

Advanced Recovery and High-Sensitive Properties of Memristor-Based Gas Sensor Devices Operated at Room Temperature.

Fast recovery, high sensitivity, high selectivity, and room temperature (RT) sensing characteristics of NO gas sensors are essential for environmental monitoring, artificial intelligence, and inflammatory diagnosis of asthma patients. However, the conventional semiconductor-type gas sensors have poor sensing characteristics that need to be solved, such as slow recovery speeds (>360 s), low sensitivity (3.8), and high operating temperatures (>300 °C).

Molecular bridge-mediated ultralow-power gas sensing.

We report the electrical detection of captured gases through measurement of the quantum tunneling characteristics of gas-mediated molecular junctions formed across nanogaps. The gas-sensing nanogap device consists of a pair of vertically stacked gold electrodes separated by an insulating 6 nm spacer (~1.5 nm of sputtered α-Si and ~4.

Preparation of defected SWCNTs decorated with en-APTAS for application in high-performance nitric oxide gas detection.

We demonstrate highly sensitive and selective chemiresistive-type NO gas detection using defected single-walled carbon nanotubes (SWCNTs) decorated with N-[3-(trimethoxysilyl)propyl]ethylene diamine (en-APTAS) molecules. The defected SWCNTs were prepared via furnace annealing at 700 °C and confirmed by transmission electron microscopy. A single en-APTAS molecule has two amine groups acting as adsorption sites for NO gas, which can improve the NO response.

Forming-Free One-Selector/One-Resistor Characteristics of Oxygen-Rich ITO Based Transparent Resistive Switching Memory via Defect Engineering Using the Reactive Sputtering Process.

In recent research of resistive random access memory (RRAM), solving the degradation phenomenon induced by both a high forming voltage to form the conducting filaments (CFs) and a high reset current is one of the main issues encountered. In this study, to overcome these problems, we propose forming-free bipolar resistive switching (BRS) behaviors by employing an ITO film with abundant oxygen vacancies, instead of conventional CF based RRAM requiring a forming process, and systematically investigate the feasibility of forming free BRS behaviors and a possible switching mechanism. Compared to conventional CF based RRAM devices, it is possible for the proposed devices to achieve stable BRS properties (i.

AlN/ITO-Based Hybrid Electrodes with Conducting Filaments: Their Application to Ultraviolet Light-Emitting Diodes.

A hybrid-type transparent conductive electrode (H-TCE) structure comprising an AlN rod array with conducting filaments (CFs) and indium tin oxide (ITO) films is proposed to improve both current injection and distribution as well as optical transmittance in the UV region. These CFs, generated in UV-transparent AlN rod areas using an electric field, can be used as conducting paths for carrier injection from a metal to a semiconductor such as p-(Al)GaN, which allows perfect Ohmic behavior with high transmittance (>95% at 365 nm) to be obtained. In addition, conduction across AlN rods and Ohmic conduction mechanisms are investigated by analyzing AlN rods and AlN rod/p-AlGaN film interfaces.

Glass-Based Transparent Conductive Electrode: Its Application to Visible-to-Ultraviolet Light-Emitting Diodes.

Nitride-based ultraviolet light-emitting diodes (UV LEDs) are promising replacements for conventional UV lamps. However, the external quantum efficiency of UV LEDs is much lower than for visible LEDs due to light absorption in the p-GaN contact and electrode layers, along with p-AlGaN growth and doping issues. To minimize such absorption, we should obtain direct ohmic contact to p-AlGaN using UV-transparent ohmic electrodes and not use p-GaN as a contact layer.

Performance of GaN-on-Si-based vertical light-emitting diodes using silicon nitride electrodes with conducting filaments: correlation between filament density and device reliability.

Transparent conductive electrodes with good conductivity and optical transmittance are an essential element for highly efficient light-emitting diodes. However, conventional indium tin oxide and its alternative transparent conductive electrodes have some trouble with a trade-off between electrical conductivity and optical transmittance, thus limiting their practical applications. Here, we present silicon nitride transparent conductive electrodes with conducting filaments embedded using the electrical breakdown process and investigate the dependence of the conducting filament density formed in the transparent conductive electrode on the device performance of gallium nitride-based vertical light-emitting diodes.

Effect of Hydrogen Post-Annealing on Transparent Conductive ITO/Ga2O3 Bi-Layer Films for Deep Ultraviolet Light-Emitting Diodes.

The effect of hydrogen post-annealing on the electrical and optical properties of ITO/Ga2O bi-layer films, deposited by RF magnetron sputtering, is investigated for potential applications to transparent conductive electrodes of ultraviolet (UV) light-emitting diodes. Three samples--an as-deposited sample and two samples post-annealed in N2 gas and N2-H2 gas mixture--were prepared and annealed at different temperatures ranging from 100 °C to 500 °C for comparison. Among these samples, the sample annealed at 300 °C in a mixture of N2 and H2 gases shows the lowest sheet resistance of 301.

Fabrication of conducting-filament-embedded indium tin oxide electrodes: application to lateral-type gallium nitride light-emitting diodes.

A novel conducting filament (CF)-embedded indium tin oxide (ITO) film is fabricated using an electrical breakdown method. To assess the performance of this layer as an ohmic contact, it is applied to GaN (gallium nitride) light-emitting diodes (LEDs) as a p-type electrode for comparison with typical GaN LEDs using metallic ITO. The operating voltage and output power of the LED with the CF embedded ITO are 3.

Electrical and optical properties of poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) and AuCl3-doped reduced graphene oxide/single-walled carbon nanotube films for ultraviolet light-emitting diodes.

Unlabelled: We report the effects of poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) (

Pedot: PSS) and gold chloride (AuCl) co-doping on the electrical and optical properties of reduced graphene oxide (RGO)/single-walled carbon nanotube (SWNT) films fabricated by dipcoating methods. The RGO/SWNT films were doped with both AuCl3 dissolved in nitromethane and

Pedot: PSS hole injection layers by spin coating to improve their electrical properties by increasing the work function of the RGO/SWNT films, thereby reducing the Schottky barrier height between the RGO/SWNT and p-GaN films. As a result, we obtained a reduced sheet resistance of 851.

Enhanced current transport and injection in thin-film gallium-nitride light-emitting diodes by laser-based doping.

This paper reports improvements in the electrical and optical properties of blue-emission gallium nitride (GaN)-based thin-film light-emitting diodes (TFLEDs) after laser-based Si doping (LBSD) of a nitrogen-face n-GaN (denoted as hereafter n-GaN) layer. Experimental results show that the light-output powers of the flat- and rough-surface TFLEDs after LBSD are 52.1 and 11.

Fabrication of wide-bandgap transparent electrodes by using conductive filaments: performance breakthrough in vertical-type GaN LED.

For realizing next-generation solid-state lighting devices, performance breakthroughs must be accomplished for nitride-based light-emitting diodes (LEDs). Highly transparent conductive electrodes (TCEs) may be key to achieving this goal, as they provide uniform current injection and distribution across a large device area, eventually increasing the light output power. However, the trade-off between electrical conductivity and optical transmittance of LEDs must be addressed.

Light-output enhancement of GaN-based vertical light-emitting diodes using periodic and conical nanopillar structures.

We investigated GaN-based vertical light-emitting diodes (VLEDs) with periodic and conical nanopillar arrays (CNAs) to improve the light-output efficiency. We found that a 470 nm diameter and 0.8-0.

ITO/Ag/ITO multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes.

ITO/Ag/ITO (IAI) multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes are fabricated by reactive sputtering, optimized by annealing, and characterized with respect to electrical and optical properties. Increasing the annealing temperature from 300°C to 500°C decreased the sheet resistance and increased the transmittance. This may result from an observed improvement in the crystallinity of the IAI multilayer and a reduction in the near-UV absorption coefficient of Ag.

Improved performance of GaN-based vertical light emitting diodes with conducting and transparent single-walled carbon nanotube networks.

In this study, reduced forward voltage and improved light output power of GaN-based vertical light-emitting diodes (VLEDs) incorporating single-walled carbon nanotube (SWNT)-networks is reported. The SWNT-networks were directly formed on a roughened (textured) n-GaN surface via a solution-processed dip-coating method. The surface-roughened VLEDs with the proposed SWNT-networks had a forward voltage of 3.

Processing technique for single-walled carbon nanotube-based sensor arrays.

We investigated a selective assembly method of fabricating single-walled carbon nanotubes (SWCNTs) on a silicon-dioxide (SiO2) surface by using only a photolithographic process; then, we fabricated 8 x 8 field-emission transistor (FET) arrays for sensor applications. Photoresist (PR) patterns were made on a SiO2-grown Si substrate by using the photolithographic process. This PR-patterned substrate was dipped into a SWCNT solution dispersed in dichlorobenzene (DCB).