Polymer/oxide bilayer dielectric for hysteresis-minimized 1 V operating 2D TMD transistors.

Despite their huge impact on future electronics, two-dimensional (2D) dichalcogenide semiconductor (TMD) based transistors suffer from the hysteretic characteristics induced by the defect traps located at the dielectric/TMD channel interface. Here, we introduce a hydroxyl-group free organic dielectric divinyl-tetramethyldisiloxane-bis (benzocyclobutene) (BCB) between the channel and conventional SiO dielectric, to practically resolve such issues. Our results demonstrate that the electrical hysteresis in the n-channel MoS and p-channel MoTe transistors were significantly reduced to less than ∼20% of initial value after being treated with hydrophobic BCB dielectric while their mobilities increased by factor of two.

Charge-Transfer-Induced p-Type Channel in MoS Flake Field Effect Transistors.

The two-dimensional transition-metal dichalcogenide semiconductor MoS has received extensive attention for decades because of its outstanding electrical and mechanical properties for next-generation devices. One weakness of MoS, however, is that it shows only n-type conduction, revealing its limitations for homogeneous PN diodes and complementary inverters. Here, we introduce a charge-transfer method to modify the conduction property of MoS from n- to p-type.

Coupling Two-Dimensional MoTe and InGaZnO Thin-Film Materials for Hybrid PN Junction and CMOS Inverters.

We report the fabrication of hybrid PN junction diode and complementary (CMOS) inverters, where 2D p-type MoTe and n-type thin film InGaZnO (IGZO) are coupled for each device process. IGZO thin film was initially patterned by conventional photolithography either for n-type material in a PN diode or for n-channel of top-gate field-effect transistors (FET) in CMOS inverter. The hybrid PN junction diode shows a good ideality factor of 1.