Atomic layer deposited high-k dielectric on graphene by functionalization through atmospheric plasma treatment.

Atomic layer-deposited (ALD) dielectric films on graphene usually show noncontinuous and rough morphology owing to the inert surface of graphene. Here, we demonstrate the deposition of thin and uniform ALD ZrO films with no seed layer on chemical vapor-deposited graphene functionalized by atmospheric oxygen plasma treatment. Transmission electron microscopy showed that the ALD ZrO films were highly crystalline, despite a low ALD temperature of 150 °C.