Two-dimensional hybrid layered materials: strain engineering on the band structure of MoS/WSe hetero-multilayers.

In this paper, we report a comprehensive modeling and simulation study of constructing hybrid layered materials by alternately stacking MoS and WSe monolayers. Such hybrid MoS/WSe hetero-multilayers exhibited direct bandgap semiconductor characteristics with bandgap energy (E ) in a range of 0.45-0.

Dirac fermions induced in strained zigzag phosphorus nanotubes and their applications in field effect transistors.

In this work, Dirac fermions have been obtained and engineered in one-dimensional (1D) zigzag phosphorus nanotubes (ZPNTs). We have performed a comprehensive first-principles computational study of the electronic properties of ZPNTs with various diameters. The results indicate that as the lattice parameter (L) along the axial direction increases, ZPNTs undergo transitions from metal to semimetal and semimetal to semiconductor, whereas Dirac fermions appear at L ranging from 3.

Novel Two-Dimensional Mechano-Electric Generators and Sensors Based on Transition Metal Dichalcogenides.

Transition metal dichalcogenides (TMDCs), such as MoS2 and WSe2, provide two-dimensional atomic crystals with semiconductor band gap. In this work, we present a design of new mechano-electric generators and sensors based on transition metal dichalcogenide nanoribbon PN junctions and heterojunctions. The mechano-electric conversion was simulated by using a first-principle calculation.