Complex disaster response framework to reduce urban disaster vulnerability.

Cities are vulnerable to a range of disasters that can occur simultaneously due to their complexity. Therefore, an effective disaster response plan is needed to reduce the disaster vulnerability of cities. In particular, evacuation route management is important for reducing the losses from a disaster.

Force uniformity control for large-area roll-to-roll process.

Demand for high throughput manufacturing has recently increased in various fields, such as electronics, photonics, optical devices, and energy. Moreover, flexible electronic devices are indispensable in applications such as touch screens, transparent conductive electrodes, transparent film heaters, organic photovoltaics, organic light-emitting diodes, and battery. For these applications, a large-area roll-to-roll (R2R) process is a promising method for producing with high throughput.

Continuous Patterning of Copper Nanowire-Based Transparent Conducting Electrodes for Use in Flexible Electronic Applications.

Simple, low-cost and scalable patterning methods for Cu nanowire (NW)-based flexible transparent conducting electrodes (FTCEs) are essential for the widespread use of Cu NW FTCEs in numerous flexible optoelectronic devices, wearable devices, and electronic skins. In this paper, continuous patterning for Cu NW FTCEs via a combination of selective intense pulsed light (IPL) and roll-to-roll (R2R) wiping process was explored. The development of continuous R2R patterning could be achieved because there was significant difference in adhesion properties between NWs and substrates depending on whether Cu NW coated area was irradiated by IPL or not.

Roll-to-roll-compatible, flexible, transparent electrodes based on self-nanoembedded Cu nanowires using intense pulsed light irradiation.

Copper nanowire (Cu NW)-based flexible transparent conductive electrodes (FTCEs) have been investigated in detail for use in various applications such as flexible touch screens, organic photovoltaics and organic light-emitting diodes. In this study, hexadecylamine (HDA) adsorbed onto the surface of NWs is changed into polyvinylpyrrolidone (PVP) via a ligand exchange process; the high-molecular-weight PVP enables high dispersion stability. Intense pulsed light (IPL) irradiation is used to remove organic species present on the surface of the NWs and to form direct connections between the NWs rapidly without any atmospheric control.

Electrical and optical properties of Y-doped indium zinc oxide films grown by RF magnetron sputtering.

Y2O3-doped IZO (YIZO) films was investigated in order to control the carrier concentration of semiconducting IZO layer. Stoichiometric thin YIZO films were deposited on glass substrates by RF magnetron sputtering method using indium zinc oxide (IZO) including 50 wt.% ZnO and Y2O3 targets.

Thin transparent W-doped indium-zinc oxide (WIZO) layer on glass.

Annealing effect on structural and electrical properties of W-doped IZO (WIZO) films for thin film transistors (TFT) was studied under different process conditions. Thin WIZO films were deposited on glass substrates by RF magnetron co-sputtering technique using indium zinc oxide (10 wt.% ZnO-doped In2O3) and WO3 targets in room temperature.

Characteristics of Al-doped ZnO films grown by atomic layer deposition for silicon nanowire photovoltaic device.

We report the structural, electrical, and optical characteristics of Al-doped ZnO (ZnO:Al) films deposited on glass by atomic layer deposition (ALD) with various Al2O3 film contents for use as transparent electrodes. Unlike films fabricated by a sputtering method, the diffraction peak position of the films deposited by ALD progressively moved to a higher angle with increasing Al2O3 film content. This indicates that Zn sites were effectively replaced by Al, due to layer-by-layer growth mechanism of ALD process which is based on alternate self-limiting surface chemical reactions.

Roll-printed organic thin-film transistor using patterned poly(dimethylsiloxane) (PDMS) stamp.

The roll-printed gate, source, and drain electrodes of organic thin-film transistors (OTFTs) were fabricated by gravure printing or gravure-offset printing using patterned poly(dimethylsiloxane) (PDMS) stamp with various channel lengths and low-resistance silver (Ag) pastes on flexible 150 x 150 mm2 plastic substrates. Bottom-contact roll-printed OTFTs used polyvinylphenol (PVP) as polymeric dielectric and bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) as organic semiconductor; they were formed by spin coating or ink-jetting. Depending on the choice of roll-printing method, the printed OTFTs obtained had a field-effect mobility of between 0.