Electrical Characterization of Charge Polarity in AlF₃ Anti-Reflection Layers for Complementary Metal Oxide Semiconductor Image Sensors.

In this study, the charge polarity of aluminum fluoride (AlF3) as a function of varying thickness (tAlF3 = 20, 35, 50, 65, and 80 nm) was discussed. AlF3 films were deposited onto p-Si wafers via electron beam sputtering. Thickness dependent charge polarity and reliability issues under bias-temperature stress conditions were identified using a capacitance-voltage (C-V) characterization method.

Nonstoichiometric Solution-Processed BaTiO₃ Film for Gate Insulator Applications.

Solution processed barium titanate (BTO) was used to fabricate an Al/BaTiO3/p-Si metal-insulator-semiconductor (MIS) structure, which was used as a gate insulator. Changes in the electrical characteristics of the film were investigated as a function of the film thickness and post deposition annealing conditions. Our results showed that a thickness of 5 layers and an annealing temperature of 650 °C produced the highest electrical performance.

Optimization of the Solution-Based Indium-Zinc Oxide/Zinc-Tin Oxide Channel Layer for Thin-Film Transistors.

Double stacked indium-zinc oxide (IZO)/zinc-tin oxide (ZTO) active layers were employed in amorphous-oxide-semiconductor thin-film transistors (AOS TFTs). Channel layers of the TFTs were optimized by varying the molarity of ZTO back channel layers (0.05, 0.

Investigation of the Charge Balance in Green Phosphorescent Organic Light-Emitting Diodes by Controlling the Mixed Host Emission Layer.

In this paper, we investigated the use of a mixed host emission layer (MH-EML) in green phosphorescent organic light-emitting diodes (OLEDs). The hole transport type (p-type) material (4,4'-Bis(N-carbazolyl)-1,1'-biphenyl (CBP)) and electron transport type (N-type) material (2,2',2″-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi)) were mixed with different ratios. The electrons were easily injected through the lowest unoccupied molecular orbital (LUMO) of TPBi in the mixed host system.

Incorporation of Si and Zr into Pure HfO₂ and Its Effects on Dielectric Integrity.

Hafnium-silicate (HfSiO4, (HfO2)x(SiO2)1-x) and hafnium-zirconate (HfZrO4, (HfO2)x(ZrO2)1-x) films were employed as a gate dielectric to enhance the electrical properties of pure HfO2. (HfO2)x(SiO2)1-x and (HfO2)x(ZrO2)1-x films were formed onto p-Si substrates with varying degrees of Hf content x (x = 1, 0.9, 0.

Reliability Improvement in Solution-Processed ZrO₂ Dielectrics Due to Addition of H₂O₂.

In this study, we investigated the effects of hydrogen peroxide (H2O2) on solution-processed zirconium oxide (ZrO2) dielectric materials. The addition of H2O2 into ZrO2 dielectric showed a reduction in hysteresis capacitance-voltage characteristics (from 393 mV to 96 mV). This resulted in a reduction in border trap density (Nbt) of the ZrO2 film (ZrO2: 2.