UV enhanced synthesis of high density Au coated ZnO nanocomposite.

We report the synthesis of high density Au coated ZnO nanocomposites by UV irradiation using a mixed solution of ZnO nanowires, HAuCl4 and Na2CO3. This synthesis process is easier and faster than a hydrothermal process in synthesizing Au/ZnO nanocomposites. The morphology, size distribution and density of the Au nanoparticles on the ZnO nanowires, which affect the photocatalytic efficiency of the synthesized Au/ZnO nanocomposite, were affected by the pH of the mixed solution.

Density control and wettability enhancement by functionalizing carbon nanotubes with nickel oxide in aluminum-carbon nanotube system.

Excellent mechanical properties of carbon nanotubes (CNTs) make them ideal reinforcements for synthesizing light weight, high strength metal matrix composite. Aluminum is attractive matrix due to its light weight and Al/CNT composites are promising materials for various industrial applications. Powder metallurgy and casting techniques are normally used for bulk fabrications of composites.

Fabrication of CdTe/Te hetero-nanostructures by vapor-solid process.

CdTe/Te core-shell heterostructures were fabricated by the vapor phase synthesis at low temperatures using a quartz tube furnace. Two step vapor-solid processes were employed. First, various tellurium structures such as nanowires, nanorods, nanoneedles, microtubes and microrods were synthesized under different deposition conditions.

Graphene growth at the interface between Ni catalyst layer and SiO2/Si substrate.

Graphene was synthesized deliberately at the interface between Ni film and SiO2/Si substrate as well as on top surface of Ni film using chemical vapor deposition (CVD) which is suitable for large-scale and low-cost synthesis of graphene. The carbon atom injected at the top surface of Ni film can penetrate and reach to the Ni/SiO2 interface for the formation of graphene. Once we have the graphene in between Ni film and SiO2/Si substrate, the substrate spontaneously provides insulating SiO2 layer and we may easily get graphene/SiO2/Si structure simply by discarding Ni film.