Efficient Cadmium-Free Inverted Red Quantum Dot Light-Emitting Diodes.

Here, we report an efficient inverted red indium phosphide (InP) comprising QD (InP/ZnSe/ZnS, core/shell structure) light-emitting diode (QLED) by modulating an interfacial contact between the electron transport layer and emissive InP-QDs and applying self-aging approach. The red InP-QLED with optimized interfacial contact exhibits a significant improvement in maximum external quantum efficiency and current efficiency from 4.42 to 10.