Hermetic sealing is an important technology for isolating and protecting air-sensitive materials and is key in the development of foldable and stretchable electronic devices. Here we report an ultra gas-proof polymer hybrid thin layer prepared by filling the free volume of the polymer with AlO using gas-phase atomic layer infiltration. The high-density polymer-inorganic hybrid shows extremely low gas transmission rate, below the detection limit of the Ca corrosion test (water vapor transmission rate <10 g m day).
View Article and Find Full Text PDFThis work presents a novel barrier thin film based on an organic-inorganic nanolaminate, which consists of alternating nanolayers of self-assembled organic layers (SAOLs) and AlO. The SAOLs-AlO nanolaminated films were deposited using a combination of molecular layer deposition and atomic layer deposition techniques at 80 °C. Modulation of the relative thickness ratio of the SAOLs and AlO enabled control over the elastic modulus and stress in the films.
View Article and Find Full Text PDFWe report on the fabrication of N,N'-ditridecyl-perylene-3,4:9,10-tetracarboxylic diimide-C13 (PTCDI-C13), n-channel organic thin-film transistors (OTFTs) with 30 nm Al(2)O(3) whose surface has been un-modified or modified with hexamethyldisilazane (HMDS) and thin hydrophobic CYTOP. Among all the devices, the OTFTs with CYTOP-modified dielectrics exhibit the most superior device performance and stability. The optimum post-annealing temperature for organic n-channels on CYTOP was also found to be as low as 80 °C, although the post-annealing was previously implemented at 120-140 °C for PTCDI domain growth in general.
View Article and Find Full Text PDFWe fabricated a new organic-inorganic hybrid superlattice film using molecular layer deposition [MLD] combined with atomic layer deposition [ALD]. In the molecular layer deposition process, polydiacetylene [PDA] layers were grown by repeated sequential adsorption of titanium tetrachloride and 2,4-hexadiyne-1,6-diol with ultraviolet polymerization under a substrate temperature of 100°C. Titanium oxide [TiO2] inorganic layers were deposited at the same temperatures with alternating surface-saturating reactions of titanium tetrachloride and water.
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