Terahertz radiation from propagating acoustic phonons based on deformation potential coupling.

We report on new THz electromagnetic emission mechanism from deformational coupling of acoustic (AC) phonons with electrons in the propagation medium of non-polar Si. The epicenters of the AC phonon pulses are the surface and interface of a GaP transducer layer whose thickness (d) is varied in nanoscale from 16 to 45 nm. The propagating AC pulses locally modulate the bandgap, which in turn generates a train of electric field pulses, inducing an abrupt drift motion at the depletion edge of Si.

Calibration for a count rate-dependent time correlation function and a random noise reduction in pulsed dynamic light scattering.

A pulsed dynamic light scattering (DLS) system, which would be potentially applied to nonlinear DLS with molecular selectivity, was developed by combining a sub-nanosecond pulsed laser with a software-based detection system. The distortion of the time correlation function due to the clipping effect in the photon counting module, and the resulting underestimation of the particle size, were successfully calibrated based on a theoretical simulation. The effective removal of random noises was also demonstrated via time gating synchronized to the laser pulses.

Correction: Crystal structure and metallization mechanism of the π-radical metal TED.

[This corrects the article DOI: 10.1039/D0SC03521A.].

Crystal structure and metallization mechanism of the π-radical metal .

Radical electrons tend to localize on individual molecules, resulting in an insulating (Mott-Hubbard) bandgap in the solid state. Herein, we report the crystal structure and intrinsic electronic properties of the first single crystal of a π-radical metal, tetrathiafulvalene-extended dicarboxylate (). The electrical conductivity is up to 30 000 S cm at 2 K and 2300 S cm at room temperature.

Coherent optical and acoustic phonons generated at lattice-matched GaP/Si(0 0 1) heterointerfaces.

Thin GaP films can be grown on an exact Si(0 0 1) substrate with nearly perfect lattice match. We perform all-optical pump-probe measurements to investigate the ultrafast electron-phonon coupling at the buried interface of GaP/Si. Above-bandgap excitation with a femtosecond laser pulse can induce coherent longitudinal optical (LO) phonons both in the GaP overlayer and in the Si substrate.

Direct Observation of Ultrafast Hole Injection from Lead Halide Perovskite by Differential Transient Transmission Spectroscopy.

Efficient charge separation at the interfaces of the perovskite with the carrier transport layers is crucial for perovskite solar cells to achieve high power conversion efficiency. We present a systematic experimental study on the hole injection dynamics from MAPbI perovskite to three typical hole transport materials (HTMs). We extract the carrier dynamics directly related to the hole injection by employing a pump light with short absorption depth and comparing the transient transmission signals excited on the two sides of the sample.

The effect of n- and p-type doping on coherent phonons in GaN.

The effect of doping on the carrier-phonon interaction in wurtzite GaN is investigated by pump-probe reflectivity measurements using 3.1 eV light in near resonance with the fundamental band gap of 3.39 eV.

Coherent phonon anisotropy in aligned single-walled carbon nanotubes.

By time-resolved reflectivity measurements with sub-10 fs laser pulses at 395 nm, the coherent phonons of aligned bundles of single-walled carbon nanotubes are observed for various polarization directions of the pump and probe pulses. In the isotropic reflectivity measurement, we observe the radial breathing modes, G, and even D modes, while in the anisotropic reflectivity mode, only the G mode appears. A complex polarization dependence of the G band phonon amplitude in the isotropic reflectivity is explained by the superposition of G band phonons with different symmetries.