In the development of silicon photonics, the continued downsizing of photonic integrated circuits will further increase the integration density, which augments the functionality of photonic chips. Compared with the traditional design method, inverse design presents a novel approach for achieving compact photonic devices. However, achieving compact, reconfigurable photonic devices with the inverse design that employs the traditional modulation method exemplified by the thermo-optic effect poses a significant challenge due to the weak modulation capability.
View Article and Find Full Text PDFMonolithic integration of novel materials without modifying the existing photonic component library is crucial to advancing heterogeneous silicon photonic integrated circuits. Here we show the introduction of a silicon nitride etch stop layer at select areas, coupled with low-loss oxide trench, enabling incorporation of functional materials without compromising foundry-verified device reliability. As an illustration, two distinct chalcogenide phase change materials (PCMs) with remarkable nonvolatile modulation capabilities, namely SbSe and GeSbSeTe, were monolithic back-end-of-line integrated, offering compact phase and intensity tuning units with zero-static power consumption.
View Article and Find Full Text PDFIntegrated optical filters show outstanding capability in integrated reconfigurable photonic applications, including wavelength division multiplexing (WDM), programmable photonic processors, and on-chip quantum photonic networks. Present schemes for reconfigurable filters either have a large footprint or suffer from high static power consumption, hindering the development of reconfigurable photonic integrated systems. Here, a reconfigurable hybrid Bragg grating filter is elaborately designed through a precise, modified coupling mode theory.
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