Publications by authors named "Kunbo Xu"
J Am Chem Soc
September 2024
Article Synopsis
- - The lack of intrinsic p-type 2D layered semiconductors has limited the progress of 2D devices like CMOS and integrated circuits, making the development of practical p-type semiconductors essential for electronics.
- - Researchers modified NbOI by applying pressure, which allowed them to control carrier polarity and concentration, leading to a transition from n-type to p-type behavior, and significantly improving its photoelectric properties.
- - The study found that under xenon irradiation, the photocurrent increased over 1000 times, with an extended spectral response range up to 1450 nm, demonstrating the potential of pressure engineering in enhancing p-type 2D semiconductors.
