Expanded Stability of Layered SnSe-PbSe Alloys and Evidence of Displacive Phase Transformation from Rocksalt in Heteroepitaxial Thin Films.

Bulk PbSnSe has a two-phase region, or miscibility gap, as the crystal changes from a van der Waals-bonded orthorhombic 2D layered structure in SnSe-rich compositions to the related 3D-bonded rocksalt structure in PbSe-rich compositions. This structural transition drives a large contrast in the electrical, optical, and thermal properties. We realize low temperature direct growth of epitaxial PbSnSe thin films on GaAs via molecular beam epitaxy using an PbSe surface treatment and show a significantly reduced two-phase region by stabilizing the layered structure out to PbSnSe, beyond the bulk limit around PbSnSe at low temperatures.

Gradual degradation in InAs quantum dot lasers on Si and GaAs.

Reliable quantum dot lasers on silicon are a key remaining challenge to successful integrated silicon photonics. In this work, quantum dot (QD) lasers on silicon with and without misfit dislocation trapping layers are aged for 12 000 hours and are compared to QD lasers on native GaAs aged for 8400 hours. The non-trapping-layer (TL) laser on silicon degrades heavily during this time, but much more modest gradual degradation is observed for the other two devices.

Impact of Transfer for Surgical Management of Preterm Necrotising Enterocolitis or Focal Intestinal Perforation.

Objective: To compare outcomes after surgically managed necrotising enterocolitis (NEC) and focal intestinal perforation (FIP) in infants <32 weeks requiring transfer to or presenting in a single surgical centre.

Design: Retrospective review of transferred and inborn NEC or FIP, from January 2013 to December 2020.

Patients: 107 transfers with possible NEC or FIP contributed 92 cases (final diagnoses NEC (75) and FIP (17)); 113 inborn cases: NEC (84) and FIP (29).

III/V-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template.

Silicon photonics is becoming a mainstream data-transmission solution for next-generation data centers, high-performance computers, and many emerging applications. The inefficiency of light emission in silicon still requires the integration of a III/V laser chip or optical gain materials onto a silicon substrate. A number of integration approaches, including flip-chip bonding, molecule or polymer wafer bonding, and monolithic III/V epitaxy, have been extensively explored in the past decade.

Phase Stability and Diffusion in Lateral Heterostructures of Methyl Ammonium Lead Halide Perovskites.

Mixed halide hybrid organic-inorganic perovskites have band gaps that span the visible spectrum making them candidates for optoelectronic devices. Transport of the halide atoms in methyl ammonium lead iodide (MAPbI) and its alloys with bromine has been observed in both dark and under illumination. While halide transport upon application of electric fields has received much attention, less is known regarding bromide and iodide interdiffusion down concentration gradients.

Fast Diffusion and Segregation along Threading Dislocations in Semiconductor Heterostructures.

Heterogeneous integration of semiconductors combines the functionality of different materials, enabling technologies such as III-V lasers and solar cells on silicon and GaN LEDs on sapphire. However, threading dislocations generated during the epitaxy of these dissimilar materials remain a key obstacle to the success of this approach due to reduced device efficiencies and reliability. Strategies to alleviate this and understand charge carrier recombination at threading dislocations now need an accurate description of the structure of threading dislocations in semiconductor heterostructures.

Praseodymium Cuprate Thin Film Cathodes for Intermediate Temperature Solid Oxide Fuel Cells: Roles of Doping, Orientation, and Crystal Structure.

Highly textured thin films of undoped, Ce-doped, and Sr-doped PrCuO were synthesized on single crystal YSZ substrates using pulsed laser deposition to investigate their area-specific resistance (ASR) as cathodes in solid-oxide fuel cells (SOFCs). The effects of T' and T* crystal structures, donor and acceptor doping, and a-axis and c-axis orientation on ASR were systematically studied using electrochemical impedance spectroscopy on half cells. The addition of both Ce and Sr dopants resulted in improvements in ASR in c-axis oriented films, as did the T* crystal structure with the a-axis orientation.

An evaluation of operative management of displaced volar Barton's fractures using volar locking plate.

Volar Barton's fractures are common but more convincing treatment methods are still controversial. Malunion can cause serious disability. Twenty-six consecutive patients were treated with open reduction Internal fixation using volar locking plate.