Influence of extraction grid on ion beam characteristics.

This work is a part of the development of a laser ion source (LIS) for multiply charged ion injectors. This experiment is devoted to the investigation of the effect of a metal grid on the extracted ion characteristics. The energy spectra of the ions in the plasma expanding into a drift tube with and without a grid have been compared.

The vacuum arc ion source for indium and tin ions implantation into phase change memory thin films.

One of the most prospective electrical and optical nonvolatile memory types is the phase change memory based on chalcogenide materials, particularly GeSbTe. Introduction of dopants is an effective method for the purposeful change of GeSbTe thin film properties. In this work, we used the ion implantation method for the introduction of In and Sn into GeSbTe thin films by a Multipurpose Test Bench (MTB) at the National Research Center "Kurchatov Institute"-Institute for Theoretical and Experimental Physics.

Surface modification of ferritic steels using MEVVA and duoplasmatron ion sources.

Metal Vapor Vacuum Arc (MEVVA) ion source (IS) is a unique tool for production of high intensity metal ion beam that can be used for material surface modification. From the other hand, the duoplasmatron ion source provides the high intensity gas ion beams. The MEVVA and duoplasmatron IS developed in Institute for Theoretical and Experimental Physics were used for the reactor steel surface modification experiments.

Molecular ion sources for low energy semiconductor ion implantation (invited).

Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase production rates, molecular ions are used. Boron and phosphorous (or arsenic) implantation is needed for P-type and N-type semiconductors, respectively.

First experiments with the negative ion source NIO1.

Neutral Beam Injectors (NBIs), which need to be strongly optimized in the perspective of DEMO reactor, request a thorough understanding of the negative ion source used and of the multi-beamlet optics. A relatively compact radio frequency (rf) ion source, named NIO1 (Negative Ion Optimization 1), with 9 beam apertures for a total H(-) current of 130 mA, 60 kV acceleration voltage, was installed at Consorzio RFX, including a high voltage deck and an X-ray shield, to provide a test bench for source optimizations for activities in support to the ITER NBI test facility. NIO1 status and plasma experiments both with air and with hydrogen as filling gas are described.

Gas feeding molecular phosphorous ion source for semiconductor implanters.

Phosphorus is a much used dopant in semiconductor technology. Its vapors represent a rather stable tetratomic molecular compound and are produced from one of the most thermodynamically stable allotropic forms of phosphorus-red phosphorus. At vacuum heating temperatures ranging from 325 °C, red phosphorus evaporates solely as P4 molecules (P4/P2 ∼ 2 × 10(5), P4/P ∼ 10(21)).

Application of the Ta liner technique to produce Ca beams at INFN-Legnaro National Laboratories (INFN-LNL).

The ECR ion sources are able to produce a wide variety of highly charged metallic ion beams thanks to the development of different techniques (ovens, sputtering, direct insertion, metal ions from volatile compounds (MIVOC)). In the case of the ovens, the sticking of the hot vapors on the surface of the plasma chamber leads to high material consumption rates. For elements like Ca, a tantalum liner inserted inside the chamber can be used to limit this phenomenon.

Installation of a versatile multiaperture negative ion source.

Neutral Beam Injectors (NBI), which need to be strongly optimized in the perspective of DEMO reactor, request a thorough understanding of the negative ion source used and of the multi-beamlet optics. A relatively compact RF ion source, named NIO1 (Negative Ion Optimization 1), with 9 beam apertures for a total H(-) current of 130 mA, 60 kV acceleration voltage, is being installed at Padua, in Consorzio RFX, to provide a test bench for source optimizations in the framework of the accompanying activities in support to the ITER NBI test facility. NIO1 construction and status of the overall installation, including a high voltage deck and an optical cavity ring down spectrometer are here summarized and reported.

Development of the ion source for cluster implantation.

Bernas ion source development to meet needs of 100s of electron-volt ion implanters for shallow junction production is in progress in Institute for Theoretical and Experimental Physics. The ion sources provides high intensity ion beam of boron clusters under self-cleaning operation mode. The last progress with ion source operation is presented.

Rhenium ion beam for implantation into semiconductors.

At the ion source test bench in Institute for Theoretical and Experimental Physics the program of ion source development for semiconductor industry is in progress. In framework of the program the Metal Vapor Vacuum Arc ion source for germanium and rhenium ion beam generation was developed and investigated. It was shown that at special conditions of ion beam implantation it is possible to fabricate not only homogenous layers of rhenium silicides solid solutions but also clusters of this compound with properties of quantum dots.

Numerical simulation of gridded electrostatic lens.

Gridded electrostatic lenses are frequently used in extraction systems and low energy ion beam transport line. Typically, for numerical simulation the grid is treated as a metal plate transparent for beam particles. The influence of real grid geometry on the beam dynamics in the gridded lens has been investigated by KOBRA-3d code.

Molecular phosphorus ion source for semiconductor technology.

This paper presents results on the generation of molecular phosphorus ion beams in a hot filament ion source. Solid red phosphorous is evaporated mainly as tetra-atomic molecules up to a temperature of 800°C. Thus, one of the main conditions for producing maximum P(4)(+) fraction in the beam is to keep the temperature of the phosphorous oven, the steam line and the discharge chamber walls no greater than 800°C.

Development of a versatile multiaperture negative ion source.

A 60 kV ion source (9 beamlets of 15 mA each of H(-)) and plasma generators are being developed at Consorzio RFX and INFN-LNL, for their versatility in experimental campaigns and for training. Unlike most experimental sources, the design aimed at continuous operation. Magnetic configuration can achieve a minimum ∣B∣ trap, smoothly merged with the extraction filter.

ITEP MEVVA ion beam for reactor material investigation.

Since 2008 the ion beam irradiation modeling experiments for the testing of reactor materials radiation hardness are under development at the ITEP heavy ion RFQ injector with MEVVA ion source. Ion beam irradiation method has certain advantages for such tests. One of them is high speed of defect formation.

ITEP MEVVA ion beam for rhenium silicide production.

The rhenium silicides are very attractive materials for semiconductor industry. In the Institute for Theoretical and Experimental Physics (ITEP) at the ion source test bench the research program of rhenium silicide production by ion beam implantation are going on. The investigation of silicon wafer after implantation of rhenium ion beam with different energy and with different total dose were carried out by secondary ions mass spectrometry, energy-dispersive x-ray microanalysis, and x-ray diffraction analysis.

Carborane beam from ITEP Bernas ion source for semiconductor implanters.

A joint research and development of steady state intense boron ion sources for hundreds of electron-volt ion implanters has been in progress for the past 5 years. The difficulties of extraction and transportation of low energy boron beams can be solved by implanting clusters of boron atoms. In Institute for Theoretical and Experimental Physics (ITEP) the Bernas ion source successfully generated the beam of decaborane ions.

Portable emittance measurement device.

In Institute for Theoretical and Experimental Physics (ITEP) the portable emittance measurements device is developed. It provides emittance measurements both with "pepper-pot" and "two slits" methods. Depending on the method of measurements, either slits or pepper-pot mask with scintillator are mounted on the two activators and are installed in two standard Balzer's cross chamber with CF-100 flanges.

Boron ion source based on planar magnetron discharge in self-sputtering mode.

An ion source based on a planar magnetron sputtering device with thermally isolated target has been designed and demonstrated. For a boron sputtering target, high target temperature is required because boron has low electrical conductivity at room temperature, increasing with temperature. The target is well-insulated thermally and can be heated by an initial low-current, high-voltage discharge mode.

Design of a versatile multiaperture negative ion source.

Negative ion sources are a key component of the neutral beam injector to be installed in the International Thermonuclear Experimental Reactor. At present research and development activities address several important issues related to beam extraction, optics, and optimization. Together with the design of real size devices and the accumulation of atomic cross section databases, a relatively small negative ion source [130 mA of H(-) at 60 kV, named Negative Ion Optimization phase 1 (NIO1)] is under construction at Consorzio RFX to contribute to benchmark numerical simulation tools and to test components, such as emittance scanners, beam dumps, and cesium ovens.

First beams from the new electron cyclotron resonance source LEGIS (LEGnaro ecrIS) at INFN-LNL.

From April 2008 the PIAVE injector for the ALPI booster was involved in the upgrade of the high voltage platform housing an electron cyclotron resonance (ECR) source. A 14.5 GHz SUPERNANOGAN type ECR replaced the existing source ALICE; at the same time, the whole platform beam line was redesigned and beam shaping and diagnostic system were installed.

Ion sources for energy extremes of ion implantation.

For the past four years a joint research and development effort designed to develop steady state, intense ion sources has been in progress with the ultimate goal to develop ion sources and techniques that meet the two energy extreme range needs of meV and hundreads of eV ion implanters. This endeavor has already resulted in record steady state output currents of high charge state of antimony and phosphorus ions: P(2+) [8.6 pmA (particle milliampere)], P(3+) (1.

Status of ITEP decaborane ion source program.

The joint research and development program is continued to develop steady-state ion source of decaborane beam for ion implantation industry. Both Freeman and Bernas ion sources for decaborane ion beam generation were investigated. Decaborane negative ion beam as well as positive ion beam were generated and delivered to the output of mass separator.

Front-end simulation of injector for terawatt accumulator.

A terawatt accumulator (TWAC) accelerator/storage ring complex with the laser ion source is in progress at ITEP. The new injector I4 based on the radio frequency quadrupole (RFQ) and interdigital H-mode (IH) linear accelerator is under construction. The front end of the new TWAC injector consists of a laser ion source, an extraction system, and a low energy beam transport (LEBT).

Experimental comparison of time-of-flight mass analysis with magnetic mass analysis.

A series of experiments was carried out in which both a magnetic analyzer (mass separator) and a time-of-flight (TOF) spectrometer were used for ion charge/mass spectral analysis of the ion beam formed by a dc Bernas ion source made for semiconductor implantation. The TOF analyzer was a detachable device that provides rapid analysis of charge-to-mass composition of moderate energy ion beams. The magnetic analyzer was a massive device using a 90 degrees -sector bending magnet with radius of the central orbit of 35 cm.