Gate-Controlled Quantum Interference Effects in a Clean Single-Wall Carbon Nanotube p-n Junction.

The precise control and deep understanding of quantum interference in carbon nanotube (CNT) devices are particularly crucial not only for exploring quantum coherent phenomena in clean one-dimensional electronic systems, but also for developing carbon-based nanoelectronics or quantum devices. Here, we construct a double split-gate structure to explore the Aharonov-Bohm (AB) interference effect in individual single-wall CNT p-n junction devices. For the first time, we achieve the AB modulation of conductance with coaxial magnetic fields as low as 3 T, where the flux through the tube is much smaller than the flux quantum.

High intrinsic ZT in InP monolayer at room temperature.

Two-dimensional thermoelectric (TE) materials which have the figure of merit ZT that is greater than 1.5 at room temperature would be highly desirable in energy conversion since the efficiency is competitive to conventional energy conversion techniques. Here, we report that the indium triphosphide (InP) monolayer shows a large ZT of 1.

Reversible and Nonvolatile Modulations of Magnetization Switching Characteristic and Domain Configuration in L10-FePt Films via Nonelectrically Controlled Strain Engineering.

Reversible and nonvolatile modulation of magnetization switching characteristic in ferromagnetic materials is crucial in developing spintronic devices with low power consumption. It is recently discovered that strain engineering can be an active and effective approach in tuning the magnetic/transport properties of thin films. The primary method in strain modulation is via the converse piezoelectric effect of ferroelectrics, which is usually volatile due to the reliance of the required electric field.

Nonvolatile modulation of electronic structure and correlative magnetism of L10-FePt films using significant strain induced by shape memory substrates.

Tuning the lattice strain (εL) is a novel approach to manipulate the magnetic, electronic, and transport properties of spintronic materials. Achievable εL in thin film samples induced by traditional ferroelectric or flexible substrates is usually volatile and well below 1%. Such limits in the tuning capability cannot meet the requirements for nonvolatile applications of spintronic materials.

Electric control of spin in monolayer WSe₂ field effect transistors.

We report first-principles theoretical investigations of quantum transport in a monolayer WSe2 field effect transistor (FET). Due to strong spin-orbit interaction (SOI) and the atomic structure of the two-dimensional lattice, monolayer WSe2 has an electronic structure that exhibits Zeeman-like up-down spin texture near the K and K' points of the Brillouin zone. In a FET, the gate electric field induces an extra, externally tunable SOI that re-orients the spins into a Rashba-like texture thereby realizing electric control of the spin.

Fiber-optic acoustic pressure sensor based on large-area nanolayer silver diaghragm.

A fiber-optic acoustic pressure sensor based on a large-area nanolayer silver diaphragm is demonstrated with a high dynamic pressure sensitivity of 160  nm/Pa at 4 kHz frequency. The sensor exhibits a noise limited detectable pressure level of 14.5  μPa/Hz(1/2).