Towards Interband Cascade lasers on InP Substrate.

In this study, we propose designs of an interband cascade laser (ICL) active region able to emit in the application-relevant mid infrared (MIR) spectral range and to be grown on an InP substrate. This is a long-sought solution as it promises a combination of ICL advantages with mature and cost-effective epitaxial technology of fabricating materials and devices with high structural and optical quality, when compared to standard approaches of growing ICLs on GaSb or InAs substrates. Therefore, we theoretically investigate a family of type II, "W"-shaped quantum wells made of InGaAs/InAs/GaAsSb with different barriers, for a range of compositions assuring the strain levels acceptable from the growth point of view.

Interband Cascade Active Region with Ultra-Broad Gain in the Mid-Infrared Range.

The optical gain spectrum has been investigated theoretically for various designs of active region based on InAs/GaInSb quantum wells-i.e., a type II material system employable in interband cascade lasers (ICLs) or optical amplifiers operating in the mid-infrared spectral range.

Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers.

The effect of interface intermixing in W-design GaSb/AlSb/InAs/Ga0.665In0.335AsxSb1 - x/InAs/AlSb/GaSb quantum wells (QWs) has been investigated by means of optical spectroscopy supported by structural data and by band structure calculations.