Crystal Lattice Defects in Deuterated Zr in Presence of O and C Impurities Studied by PAS and XRD for Electron Screening Effect.

Low-energy nuclear reactions are known to be extremely dependent on the local crystal structure and crystal defects of the deuterated samples. This has a strong influence on both hydrogen diffusion and the effective electron mass. The latter determines the strength of the local electron-screening effect and can change the deuteron-deuteron reaction rates at very low energies by many orders of magnitude.

Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing.

Controlled doping with an effective carrier concentration higher than 10 cm is a key challenge for the full integration of Ge into silicon-based technology. Such a highly doped layer of both p- and n type is needed to provide ohmic contacts with low specific resistance. We have studied the effect of ion implantation parameters i.

InP nanocrystals on silicon for optoelectronic applications.

One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices within a single chip. Silicon with its indirect band gap has poor optical properties, which is its main drawback. Therefore, a different material has to be used for the on-chip optical interconnections, e.