Structural Properties of Thin ZnO Films Deposited by ALD under O-Rich and Zn-Rich Growth Conditions and Their Relationship with Electrical Parameters.

The structural, optical, and electrical properties of ZnO are intimately intertwined. In the present work, the structural and transport properties of 100 nm thick polycrystalline ZnO films obtained by atomic layer deposition (ALD) at a growth temperature (T) of 100-300 °C were investigated. The electrical properties of the films showed a dependence on the substrate (-AlO or Si (100)) and a high sensitivity to T, related to the deviation of the film stoichiometry as demonstrated by the RT-Hall effect.

Impact of GaAs(100) surface preparation on EQE of AZO/AlO/p-GaAs photovoltaic structures.

In order to effectively utilize the photovoltaic properties of gallium arsenide, its surface/interface needs to be properly prepared. In the experiments described here we examined eight different paths of GaAs surface treatment (cleaning, etching, passivation) which resulted in different external quantum efficiency (EQE) values of the tested photovoltaic (PV) cells. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) examinations were conducted to obtain structural details of the devices.

Photovoltaic properties of ZnO nanorods/p-type Si heterojunction structures.

Selected properties of photovoltaic (PV) structures based on n-type zinc oxide nanorods grown by a low temperature hydrothermal method on p-type silicon substrates (100) are investigated. PV structures were covered with thin films of Al doped ZnO grown by atomic layer deposition acting as transparent electrodes. The investigated PV structures differ in terms of the shapes and densities of their nanorods.