Indirect Thermographic Measurement of the Temperature of a Transistor Die during Pulse Operation.

This paper presents aspects related to the indirect thermographic measurement of a C2M0280120D transistor in pulse mode. The tested transistor was made on the basis of silicon carbide and is commonly used in many applications. During the research, the pulse frequency was varied from 1 kHz to 800 kHz.

The Estimated Temperature of the Semiconductor Diode Junction on the Basis of the Remote Thermographic Measurement.

The value of a semiconductor's diode temperature determines the correct operation of this element and its useful lifetime. One of the methods for determining the die temperature of a semiconductor diode is through the use of indirect thermographic measurements. The accuracy of the thermographic temperature measurement of the diode case depends on the prevailing conditions.

The Solution for the Thermographic Measurement of the Temperature of a Small Object.

This article describes the measuring system and the influence of selected factors on the accuracy of thermographic temperature measurement using a macrolens. This method enables thermographic measurement of the temperature of a small object with an area of square millimeters as, e.g.

Lack of Thermogram Sharpness as Component of Thermographic Temperature Measurement Uncertainty Budget.

The number of components of a thermographic temperature measurement uncertainty budget and their ultimate contribution depend on the conditions in which the measurement is performed. The acquired data determine the accuracy with which the uncertainty component is estimated. Unfortunately, when some factors have to be taken into account, it is difficult to determine the value of the uncertainty component caused by the occurrence of this factor.