Optimization of MBE Growth Conditions of InAlAs Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers.

We investigate molecular beam epitaxy (MBE) growth conditions of micrometers-thick InAlAs designed for waveguide of InGaAs/InAlAs/InP quantum cascade lasers. The effects of growth temperature and V/III ratio on the surface morphology and defect structure were studied. The growth conditions which were developed for the growth of cascaded InGaAs/InAlAs active region, e.

Switchable double wavelength generating vertical external cavity surface-emitting laser.

Switchable, double wavelength generation is demonstrated from a single vertical external cavity surface-emitting laser chip. Power of ~0.5 W for two wavelengths λ≈967 nm and 1,018 nm i.