The Overview of Silicon Carbide Technology: Status, Challenges, Key Drivers, and Product Roadmap.

Arguably, SiC technology is the most rapidly expanding IC manufacturing technology driven mostly by the aggressive roadmap for battery electric vehicle penetration and also industrial high-voltage/high-power applications. This paper provides a comprehensive overview of the state of the art of SiC technology focusing on the challenges starting from the difficult and lengthy SiC substrate growth all the way to the complex MOSFET assembly processes. We focus on the differentiation from the established Si manufacturing processes and provide a comprehensive list of references as well as a brief description of our own research into the key manufacturing processes in this technology.

Carrier Trap Density Reduction at SiO/4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres.

The electrical and physical properties of the SiC/SiO interfaces are critical for the reliability and performance of SiC-based MOSFETs. Optimizing the oxidation and post-oxidation processes is the most promising method of improving oxide quality, channel mobility, and thus the series resistance of the MOSFET. In this work, we analyze the effects of the POCl annealing and NO annealing processes on the electrical properties of metal-oxide-semiconductor (MOS) devices formed on 4H-SiC (0001).

Combined Long-Period Fiber Grating and Microcavity In-Line Mach-Zehnder Interferometer for Refractive Index Measurements with Limited Cross-Sensitivity.

This work discusses sensing properties of a long-period grating (LPG) and microcavity in-line Mach-Zehnder interferometer (µIMZI) when both are induced in the same single-mode optical fiber. LPGs were either etched or nanocoated with aluminum oxide (AlO) to increase its refractive index (RI) sensitivity up to ≈2000 and 9000 nm/RIU, respectively. The µIMZI was machined using a femtosecond laser as a cylindrical cavity (d = 60 μm) in the center of the LPG.