Publications by authors named "Kristina Husekova"
Different phases of GaO have been regarded as superior platforms for making new-generation high-performance electronic devices. However, understanding of thermal transport in different phases of nanoscale GaO thin-films remains challenging, owing to the lack of phonon transport models and systematic experimental investigations. Here, thermal conductivity (TC) and thermal boundary conductance (TBC) of the α-, β-, and (001) κ-GaO thin films on sapphire are investigated.
View Article and Find Full Text PDFWe report on crystal structure and thermal stability of epitaxial ε/κ-Ga2O3 thin films grown by liquid-injection metal−organic chemical vapor deposition (LI-MOCVD). Si-doped Ga2O3 films with a thickness of 120 nm and root mean square surface roughness of ~1 nm were grown using gallium-tetramethylheptanedionate (Ga(thd)3) and tetraethyl orthosilicate (TEOS) as Ga and Si precursor, respectively, on c-plane sapphire substrates at 600 °C. In particular, the possibility to discriminate between ε and κ-phase Ga2O3 using X-ray diffraction (XRD) φ-scan analysis or electron diffraction analysis using conventional TEM was investigated.
View Article and Find Full Text PDFNanoscale characterization of TiO(2) films grown by atomic layer deposition on RuO(2) electrodes.
ACS Appl Mater Interfaces
February 2014
Article Synopsis
- The study examines the topography and leakage current behaviors of TiO2 films created through atomic layer deposition on RuO2 electrodes, using either TiCl4 or Ti(O-i-C3H7)4 as precursors.
- For both types of films, the leakage current is primarily concentrated in elevated grain areas rather than along the grain boundaries.
- It was found that the TiCl4-based films exhibit a higher and more localized leakage current compared to those based on Ti(O-i-C3H7)4, with both films maintaining a similar physical thickness of about 20 nm.