High Performance Pd/4H-SiC Epitaxial Schottky Barrier Radiation Detectors for Harsh Environment Applications.

Although many refractory metals have been investigated as the choice of contact metal in 4H-SiC devices, palladium (Pd) as a Schottky barrier contact for 4H-SiC radiation detectors for harsh environment applications has not been investigated adequately. Pd is a refractory metal with high material weight-to-thickness ratio and a work function as high as nickel, one of the conventional metal contacts for high performing 4H-SiC Schottky barrier detectors (SBDs). In this article, Pd/4H-SiC epitaxial SBDs have been demonstrated for the first time as a superior self-biased (0 V applied bias) radiation detector when compared to benchmark Ni/4H-SiC SBDs.

An accidental emamectin benzoate poisoning in child: A case report.

We report a case of accidental Emamectin Benzoate poisoning in a six-year-old child resulting in nausea, vomiting, abdominal pain, and confusion. We did vigorous gastric lavage with saline, activated charcoal, and coconut oil. The other supportive treatment improved the outcome of the patient with complete resolution of symptoms.

A case report of secondary spontaneous pneumothorax in acute exacerbation of COPD managed with improvised chest tube drain.

Introduction: and importance: We reported a case of secondary spontaneous pneumothorax (SSP) in a 70-years-old male with acute exacerbation of COPD (AE COPD) managed with improvised chest tube drain (ICD).

Case Presentation: He presented with sudden onset breathlessness and oxygen saturation of 78%. With prolonged expiration on auscultation, he was treated as AE COPD with oxygen therapy, nebulization with albuterol/ipratropium, and injectable antibiotics and steroids.

Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices.

Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for harsh environment application have been studied extensively and reviewed in this article. The miniaturized devices were developed at the University of South Carolina (UofSC) on 8 × 8mm 4H-SiC epitaxial layer wafers with an active area of ≈11 mm. The thicknesses of the actual epitaxial layers were either 20 or 50 µm.

Optical down-conversion in doped ZnSe:Tb3+ nanocrystals.

Rare earth (RE) Tb(3+)-doped high quality ZnSe nanocrystals (NCs) were synthesized by a facile chemical hot-injection method. ZnSe:Tb(3+) nanocrystals exhibited broadband absorption below the first excitonic absorption peak. Photoluminescence spectra showed Tb(3+) emission lines in the visible spectral window at room temperature when excited by UV radiation below the band-edge of the host ZnSe nanocrystals.

Theoretical studies of defect states in GaTe.

Using first principle electronic structure calculations within density functional theory and the supercell model, we have investigated the nature and formation energies of defect states associated with Ga and Te vacancies and Ge and Sn substitutional impurities in GaTe. We have also calculated the band structure of pure GaTe for comparison with systems with defects and also to find out the importance of spin-orbit interaction (SOI) on its band structure. We find that the top valence band at the Γ-point shifts up in energy by ∼0.