Defect structure-electronic property correlations in transition metal dichalcogenide grain boundaries.

Grain boundaries (Gb) in transition metal dichalcogenides are a rich source of interesting physics as well as a cause of concern because of its impact on electron transport across them in large area electronic device applications. Here, using first principles calculations, we show that beyond the conventional definition of grain boundaries based on misorientation, the defect structure present at the grain boundaries plays a significant role in defining the local electronic properties. We observed that even the standard 5-7 defect ring has differing electronic characteristics depending on its internal configuration.

On the unique temperature-dependent interplay of a B-exciton and its trion in monolayer MoSe.

Plasmonics in metal nanoparticles can enhance their near field optical interaction with matter, promoting emission into selected optical modes. Here, using Ga nanoparticles with carefully tuned plasmonic resonance in proximity to MoSe monolayers, we show selective photoluminescence enhancement from the B-exciton and its trion with no observable A-exciton emission. The nanoengineered substrate allows for the first direct experimental observation of the B-trion binding energy in semiconducting monolayers.

Thermodynamic Window for Size-Controlled Pore Formation in Graphene for Large-Scale Molecular Sieves.

Nanopores in graphene monolayers are a promising option for molecular separation applications, such as desalination and carbon capture. Graphene's atomic thickness allows for an optimal balance between molecular selectivity and permeability, while its chemical stability and robust mechanical properties make it appealing for a wide range of commercial applications. However, scaling to large areas with controlled pore size distribution is an open challenge in ultrathin membranes.

Enhanced Cooper-Pair Injection into a Semiconductor Structure by Resonant Tunneling.

We demonstrate enhanced Andreev reflection in a Nb/InGaAs/InP-based superconductor-semiconductor hybrid device resulting in increased Cooper-pair injection efficiency, achieved by Cooper-pair tunneling into a semiconductor quantum well resonant state. We show this enhancement by investigating the differential conductance spectra of two kinds of samples: one exhibiting resonant states and one which does not. We observe resonant features alongside strong enhancement of Cooper pair injection in the resonant sample, and lack of Cooper pair injection in the nonresonant sample.

Quantum capacitance of coupled two-dimensional electron gases.

Quantum capacitance effect is observed in nanostructured material stacks with quantum limited density of states. In contrast to conventional structures where two-dimensional electron gases (2DEG) with reduced density of states interact with a metal plate, here we explore the quantum capacitance effect in a unique structure formed by two 2DEG in a graphene sheet and AlGaN/GaN quantum well. The total capacitance of the structure depends non-linearly on the applied potential and the linear density of states in graphene leads to enhanced electric field leakage into the substrate causing a dramatic 50% drop in the overall capacitance at low bias potentials.

High-Cooper-pair injection in a semiconductor-superconductor structure.

We observe Andreev reflection in a YBCO-GaN junction through differential conductance spectroscopy. A strong characteristic zero-bias peak was observed and persisted up to the critical temperature of the superconductor with a smaller superconducting order parameter Δ ∼ 1 meV. The presence of Andreev reflection with the small Δ in comparison to its value for high-superconductors forms an important milestone toward demonstration of superconducting proximity in high-/semiconductor junctions.

Enhanced two-photon amplification in superconductor-semiconductor plasmonic waveguides.

We theoretically demonstrate significant enhancement of two-photon amplification by using a superconductor for both a Cooper-pair source and surface plasmon-polariton mode guiding. Cooper-pair-based gain active region restriction to the superconductor-semiconductor interface limits its potentially highly efficient two-photon gain process. Using the superconductor layer for a plasmonic waveguide structure allows strong photon confinement while reducing design and fabrication constraints.

Observation of 2D semiconductor P-type dark-exciton lifetime using two-photon ultrafast spectroscopy.

We report direct measurements of intrinsic lifetimes of P-type dark-excitons in MoS monolayers. Using sub-gap excitation, we demonstrate two-photon excited direct population of P-type dark excitons, observe their scattering to bright states and decay with femtosecond resolution. In contrast to one-photon excitation schemes, non-monotonic density variation in bright exciton population observed under two-photon excitation shows the indirect nature of its population and competing decay pathways.

Reversible defect engineering in graphene grain boundaries.

Research efforts in large area graphene synthesis have been focused on increasing grain size. Here, it is shown that, beyond 1 μm grain size, grain boundary engineering determines the electronic properties of the monolayer. It is established by chemical vapor deposition experiments and first-principle calculations that there is a thermodynamic correlation between the vapor phase chemistry and carbon potential at grain boundaries and triple junctions.

Andreev Reflection in a Superconducting Light-Emitting Diode.

We experimentally demonstrate Cooper-pair injection into a superconducting light-emitting diode by observing Andreev reflection at the superconductor-semiconductor interface, overcoming the contradicting requirements of an electrically transparent interface and radiative recombination efficiency. The device exhibits electroluminescence enhancement at the quasi-Fermi energy at temperatures below T. The theoretically predicted conductance and electroluminescence spectra based on Cooper-pair injection into the semiconductor correspond well to our experimental results.

Nanoscale High-Tc YBCO/GaN Super-Schottky Diode.

We demonstrate a high-temperature nanoscale super-Schottky diode based on a superconducting tunnel junction of pulsed-laser-deposited YBCO on GaN thin films. A buffer-free direct growth of nanoscale YBCO thin films on heavily doped GaN was performed to realize a direct high-T superconductor-semiconductor junction. The junction shows strongly non-linear I-V characteristics, which have practical applications as a low-voltage super-Schottky diode for microwave mixing and detection.