Optical polarization properties of m-plane AlxGa1-xN epitaxial films grown on m-plane freestanding GaN substrates toward nonpolar ultraviolet LEDs.

Light polarization characteristics of the near-band-edge optical transitions in m-plane AlxGa1-xN epilayers suffering from anisotropic stresses are quantitatively explained. The epilayers were grown on an m-plane freestanding GaN substrate by both ammonia-source molecular beam epitaxy and metalorganic vapor phase epitaxy methods. The light polarization direction altered from E [symbol see text]c to E//c at the AlN mole fraction, x, between 0.

Spatial light modulator with an over-two-octave bandwidth from ultraviolet to near infrared.

We developed a 1-pixel ultraviolet-to-near-infrared (UV-to-NIR) liquid-crystal spatial light modulator (LC-SLM) and clarified its phase modulation properties in detail, for the first time to our knowledge. The employed liquid crystal is transparent over 260-1100 nm. A phase modulation capability of 55.