Tuning the electro-optical properties of nanowire networks.

Conductive and transparent metallic nanowire networks are regarded as promising alternatives to Indium-Tin-Oxides (ITOs) in emerging flexible next-generation technologies due to their prominent optoelectronic properties and low-cost fabrication. The performance of such systems closely relies on many geometrical, physical, and intrinsic properties of the nanowire materials as well as the device-layout. A comprehensive computational study is essential to model and quantify the device's optical and electrical responses prior to fabrication.

Nonlinear ion drift-diffusion memristance description of TiO RRAM devices.

The nature and direction of the hysteresis in memristive devices is critical to device operation and performance and the ability to realise their potential in neuromorphic applications. TiO is a prototypical memristive device material and is known to show hysteresis loops with both clockwise switching and counter-clockwise switching and in many instances evidence of negative differential resistance (NDR) behaviour. Here we study the electrical response of a device composed of a single nanowire channel Au-Ti/TiO/Ti-Au both in air and under vacuum and simulate the - characteristics in each case using the Schottky barrier and an ohmic-like transport memristive model which capture nonlinear diffusion and migration of ions within the wire.