Composite p-Si/AlO/Ni Photoelectrode for Hydrogen Evolution Reaction.

A photoelectrode for hydrogen evolution reaction (HER) is proposed, which is based on p-type silicon (p-Si) passivated with an ultrathin (10 nm) alumina (AlO) layer and modified with microformations of a nickel catalyst. The AlO layer was formed using atomic layer deposition (ALD), while the nickel was deposited photoelectrochemically. The alumina film improved the electronic properties of the substrate and, at the same time, protected the surface from corrosion and enabled the deposition of nickel microformations.

Photoelectric Properties of Planar and Mesoporous Structured Perovskite Solar Cells.

The high efficiency of perovskite solar cells strongly depends on the quality of perovskite films and carrier extraction layers. Here, we present the results of an investigation of the photoelectric properties of solar cells based on perovskite films grown on compact and mesoporous titanium dioxide layers. Kinetics of charge carrier transport and their extraction in triple-cation perovskite solar cells were studied by using transient photovoltage and time-resolved photoluminescence decay measurements.

Silicon Passivation by Ultrathin Hafnium Oxide Layer for Photoelectrochemical Applications.

Hafnium oxide (HfO) films on silicon have the potential for application in photovoltaic devices. However, very little is known about the photoelectrochemical and protective properties of HfO films on Si. In this study, ultrathin films of HfO in the range of 15-70 nm were deposited on p-Si and Au substrates by atomic layer deposition (ALD).

Impact of Cesium Concentration on Optoelectronic Properties of Metal Halide Perovskites.

Performance of a perovskite solar cell is largely influenced by the optoelectronic properties of metal halide perovskite films. Here we study the influence of cesium concentration on morphology, crystal structure, photoluminescence and optical properties of the triple cation perovskite film. Incorporation of small amount (x = 0.

Low Resistance TiO/p-Si Heterojunction for Tandem Solar Cells.

Niobium-doped titanium dioxide (TiNbO) films were grown on -type Si substrates at low temperature (170 °C) using an atomic layer deposition technique. The as-deposited films were amorphous and showed low electrical conductivity. The films became electrically well-conducting and crystallized into the an anatase structure upon reductive post-deposition annealing at 600 °C in an H atmosphere for 30 min.