Recent progress in artificial intelligence is largely attributed to the rapid development of machine learning, especially in the algorithm and neural network models. However, it is the performance of the hardware, in particular the energy efficiency of a computing system that sets the fundamental limit of the capability of machine learning. Data-centric computing requires a revolution in hardware systems, since traditional digital computers based on transistors and the von Neumann architecture were not purposely designed for neuromorphic computing.
View Article and Find Full Text PDFIEEE Trans Neural Netw Learn Syst
October 2018
Potential advantages of analog- and mixed-signal nanoelectronic circuits, based on floating-gate devices with adjustable conductance, for neuromorphic computing had been realized long time ago. However, practical realizations of this approach suffered from using rudimentary floating-gate cells of relatively large area. Here, we report a prototype $28\times28$ binary-input, ten-output, three-layer neuromorphic network based on arrays of highly optimized embedded nonvolatile floating-gate cells, redesigned from a commercial 180-nm nor flash memory.
View Article and Find Full Text PDFWe have calculated key characteristics of associative (content-addressable) spatial-temporal memories based on neuromorphic networks with restricted connectivity-"CrossNets." Such networks may be naturally implemented in nanoelectronic hardware using hybrid memristive circuits, which may feature extremely high energy efficiency, approaching that of biological cortical circuits, at much higher operation speed. Our numerical simulations, in some cases confirmed by analytical calculations, show that the characteristics depend substantially on the method of information recording into the memory.
View Article and Find Full Text PDFIEEE Trans Neural Netw Learn Syst
April 2014
We have performed extensive numerical simulations of the autonomous evolution of memristive neuromorphic networks (CrossNets) with the recurrent InBar topology. The synaptic connections were assumed to have the quasi-Hebbian plasticity that may be naturally implemented using a stochastic multiplication technique. When somatic gain g exceeds its critical value g(t), the trivial fixed point of the system becomes unstable, and it enters a self-excitory transient process that eventually leads to a stable static state with equal magnitudes of all the action potentials x(j) and synaptic weights w(jk).
View Article and Find Full Text PDFJ Nanosci Nanotechnol
January 2007
We have calculated the maximum useful bit density that may be achieved by the synergy of bad bit exclusion and advanced (BCH) error correcting codes in prospective crossbar nanoelectronic memories, as a function of defective memory cell fraction. While our calculations are based on a particular ("CMOL") memory topology, with naturally segmented nanowires and an area-distributed nano/CMOS interface, for realistic parameters our results are also applicable to "global" crossbar memories with peripheral interfaces. The results indicate that the crossbar memories with a nano/CMOS pitch ratio close to 1/3 (which is typical for the current, initial stage of the nanoelectronics development) may overcome purely semiconductor memories in useful bit density if the fraction of nanodevice defects (stuck-on-faults) is below approximately 15%, even under rather tough, 30 ns upper bound on the total access time.
View Article and Find Full Text PDFIn this letter, we have found a more general formulation of the REward Increment = Nonnegative Factor x Offset Reinforcement x Characteristic Eligibility (REINFORCE) learning principle first suggested by Williams. The new formulation has enabled us to apply the principle to global reinforcement learning in networks with various sources of randomness, and to suggest several simple local rules for such networks. Numerical simulations have shown that for simple classification and reinforcement learning tasks, at least one family of the new learning rules gives results comparable to those provided by the famous Rules A(r-i) and A(r-p) for the Boltzmann machines.
View Article and Find Full Text PDFJ Phys Condens Matter
February 2006
We have extended our supercomputer-enabled Monte Carlo simulations of hopping transport in completely disordered 2D conductors to the case of substantial electron-electron Coulomb interaction. Such interaction may not only suppress the average value of hopping current, but also affect its fluctuations rather substantially. In particular, the spectral density S(I)(f) of current fluctuations exhibits, at sufficiently low frequencies, a 1/f-like increase which approximately follows the Hooge scaling, even at vanishing temperature.
View Article and Find Full Text PDFWe have used modern supercomputer facilities to carry out extensive Monte Carlo simulations of 2D hopping (at negligible Coulomb interaction) in conductors with a completely random distribution of localized sites in both space and energy, within a broad range of the applied electric field E and temperature T, both within and beyond the variable-range hopping region. The calculated properties include not only dc current and statistics of localized site occupation and hop lengths, but also the current fluctuation spectrum. Within the calculation accuracy, the model does not exhibit 1/f noise, so that the low-frequency noise at low temperatures may be characterized by the Fano factor F.
View Article and Find Full Text PDFWe have developed a method for calculation of quantum fluctuation effects, in particular, of the uncertainty zone developing at the potential curvature sign inversion, for a damped harmonic oscillator with arbitrary time dependence of frequency and for arbitrary temperature, within the Caldeira-Leggett model. The method has been applied to the calculation of the gray zone width Delta Ix of Josephson-junction balanced comparators. The calculated temperature dependence of Delta Ix in the range 1.
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