Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO-Based FeFETs for In-Memory-Computing Applications.

This article reports an improvement in the performance of the hafnium oxide-based (HfO) ferroelectric field-effect transistors (FeFET) achieved by a synergistic approach of interfacial layer () engineering and -voltage optimization. FeFET devices with silicon dioxide (SiO) and silicon oxynitride (SiON) as were fabricated and characterized. Although the FeFETs with SiO interfaces demonstrated better low-frequency characteristics compared to the FeFETs with SiON interfaces, the latter demonstrated better endurance and retention.

Structural and Electrical Response of Emerging Memories Exposed to Heavy Ion Radiation.

Hafnium oxide- and GeSbTe-based functional layers are promising candidates in material systems for emerging memory technologies. They are also discussed as contenders for radiation-harsh environment applications. Testing the resilience against ion radiation is of high importance to identify materials that are feasible for future applications of emerging memory technologies like oxide-based, ferroelectric, and phase-change random-access memory.

Electric field-induced crystallization of ferroelectric hafnium zirconium oxide.

Ferroelectricity in crystalline hafnium oxide thin films is strongly investigated for the application in non-volatile memories, sensors and other applications. Especially for back-end-of-line (BEoL) integration the decrease of crystallization temperature is of major importance. However, an alternative method for inducing ferroelectricity in amorphous or semi-crystalline hafnium zirconium oxide films is presented here, using the newly discovered effect of electric field-induced crystallization in hafnium oxide films.

A FeFET with a novel MFMFIS gate stack: towards energy-efficient and ultrafast NVMs for neuromorphic computing.

The discovery of ferroelectricity in the fluorite structure based hafnium oxide (HfO) material sparked major efforts for reviving the ferroelectric field effect transistor (FeFET) memory concept. A Novel metal-ferroelectric-metal-ferroelectric-insulator-semiconductor (MFMFIS) FeFET memory is reported based on dual ferroelectric integration as an MFM and MFIS in a single gate stack using Si-doped Hafnium oxide (HSO) ferroelectric (FE) material. The MFMFIS top and bottom electrode contacts, dual HSO based ferroelectric layers, and tailored MFM to MFIS area ratio (AR-TB) provide a flexible stack structure tuning for improving the FeFET performance.

Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction.

The microstructure of ferroelectric hafnium oxide plays a vital role for its application, e.g., non-volatile memories.