Determination of Hafnium Zirconium Oxide Interfacial Band Alignments Using Internal Photoemission Spectroscopy and X-ray Photoelectron Spectroscopy.

Doped ferroelectric HfO is highly promising for integration into complementary metal-oxide semiconductor (CMOS) technology for devices such as ferroelectric nonvolatile memory and low-power field-effect transistors (FETs). We report the direct measurement of the energy barriers between various metal electrodes (Pt, Au, Ta, TaN, Ti/Pt, Ni, Al) and hafnium zirconium oxide (HfZrO, HZO) using internal photoemission (IPE) spectroscopy. Results are compared with valence band offsets determined using the three-sample X-ray photoelectron spectroscopy (XPS) as well as the two-sample hard X-ray photoelectron spectroscopy (HAXPES) techniques.

Atomic Layer Deposition of Transparent p-Type Semiconducting Nickel Oxide Using Ni(DAD) and Ozone.

A novel atomic layer deposition (ALD) process for nickel oxide (NiO) is developed using a recently reported diazadienyl complex, Ni(DAD), and ozone. A window of constant growth per cycle is found between 185 and 200 °C at 0.12 nm/cycle, among the highest reported for ALD NiO.