High-performance 2D electronic devices enabled by strong and tough two-dimensional polymer with ultra-low dielectric constant.

As the feature size of microelectronic circuits is scaling down to nanometer order, the increasing interconnect crosstalk, resistance-capacitance (RC) delay and power consumption can limit the chip performance and reliability. To address these challenges, new low-k dielectric (k < 2) materials need to be developed to replace current silicon dioxide (k = 3.9) or SiCOH, etc.

Van der Waals Encapsulation by Ultrathin Oxide for Air-Sensitive 2D Materials.

The ambient stability is one of the focal points for applications of 2D materials, especially for those well-known air-sensitive ones, such as black phosphorus (BP) and transitional metal telluride. Traditional methods of encapsulation, such as atomic layer deposition of oxides and heterogeneous integration of hexagonal boron nitride, can hardly avoid removal of encapsulation layer when the 2D materials are encapsulated for further device fabrication, which causes complexity and damage during the procedure. Here, a van der Waals encapsulation method that allows direct device fabrication without removal of encapsulation layer is introduced using GaO from liquid gallium.

Vapor Deposition of Bilayer 3R MoS with Room-Temperature Ferroelectricity.

Two-dimensional ultrathin ferroelectrics have attracted much interest due to their potential application in high-density integration of non-volatile memory devices. Recently, 2D van der Waals ferroelectric based on interlayer translation has been reported in twisted bilayer h-BN and transition metal dichalcogenides (TMDs). However, sliding ferroelectricity is not well studied in non-twisted homo-bilayer TMD grown directly by chemical vapor deposition (CVD).

Plasma-Enhanced Chemical Vapor Deposition of Two-Dimensional Materials for Applications.

ConspectusSince the rise of two-dimensional (2D) materials, synthetic methods including mechanical exfoliation, solution synthesis, and chemical vapor deposition (CVD) have been developed. Mechanical exfoliation prepares randomly shaped materials with small size. Solution synthesis introduces impurities that degrade the performances.

Catalyst-Free Growth of Two-Dimensional BCN Materials on Dielectrics by Temperature-Dependent Plasma-Enhanced Chemical Vapor Deposition.

Traditional methods to prepare two-dimensional (2D) B-C-N ternary materials (BCN), such as chemical vapor deposition (CVD), require sophisticated experimental conditions such as high temperature, delicate control of precursors, and postgrowth transfer from catalytic substrates, and the products are generally thick or bulky films without the atomically mixed phase of B-C-N, hampering practical applications of these materials. Here, for the first time, we develop a temperature-dependent plasma-enhanced chemical vapor deposition (PECVD) method to grow 2D BCN materials directly on noncatalytic dielectrics at low temperature with high controllability. The C, N, and B compositions can be tuned by simply changing the growth temperature.

Free radical sensors based on inner-cutting graphene field-effect transistors.

Due to ultra-high reactivity, direct determination of free radicals, especially hydroxyl radical (•OH) with ultra-short lifetime, by field-effect transistor (FET) sensors remains a challenge, which hampers evaluating the role that free radical plays in physiological and pathological processes. Here, we develop a •OH FET sensor with a graphene channel functionalized by metal ion indicators. At the electrolyte/graphene interface, highly reactive •OH cuts the cysteamine to release the metal ions, resulting in surface charge de-doping and a current response.

Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation.

Relatively low mobility and thermal conductance create challenges for application of tungsten diselenide (WSe) in high performance devices. Dielectric interface is of extremely importance for improving carrier transport and heat spreading in a semiconductor device. Here, by near-equilibrium plasma-enhanced chemical vapour deposition, we realize catalyst-free growth of poly-crystalline two-dimensional hexagonal-boron nitride (2D-BN) with domains around 20~ 200 nm directly on SiO/Si, quartz, sapphire, silicon or SiO/Si with three-dimensional patterns at 300 °C.

Enhanced photoelectrical response of thermodynamically epitaxial organic crystals at the two-dimensional limit.

Owing to strong light-matter interaction, two-dimensional (2D) organic crystal is regarded as promising materials for ultrasensitive photodetectors, however it still received limited success due to degraded photoelectrical response and problems in controllable growth. Here, we find the growth of 2D organic crystal obeys Gibbs-Curie-Wulff law, and develop a seed-epitaxial drop-casting method to grow millimeter-sized 1,4-bis(4-methylstyryl)benzene 2D crystals on SiO/Si in a thermodynamically controlled process. On SiO/Si, a distinct 2D limit effect is observed, which remarkably enhances internal photoresponsivity compared with bulk crystals.