Rowhammer Attacks in Dynamic Random-Access Memory and Defense Methods.

This paper provides a comprehensive overview of the security vulnerability known as rowhammer in Dynamic Random-Access Memory (DRAM). While DRAM offers many desirable advantages, including low latency, high density, and cost-effectiveness, rowhammer vulnerability, first identified in 2014, poses a significant threat to computing systems. Rowhammer attacks involve repetitive access to specific DRAM rows, which can cause bit flips in neighboring rows, potentially compromising system credentials, integrity, and availability.

High-Density 1R/1W Dual-Port Spin-Transfer Torque MRAM.

Spin-transfer torque magnetic random-access memory (STT-MRAM) has several desirable features, such as non-volatility, high integration density, and near-zero leakage power. However, it is challenging to adopt STT-MRAM in a wide range of memory applications owing to the long write latency and a tradeoff between read stability and write ability. To mitigate these issues, an STT-MRAM bit cell can be designed with two transistors to support multiple ports, as well as the independent optimization of read stability and write ability.