Graphene-based plasmonic metamaterial for terahertz laser transistors.

This paper reviews recent advances in the research and development of graphene-based plasmonic metamaterials for terahertz (THz) laser transistors. The authors' theoretical discovery on THz laser transistors in 2007 was realized as a distributed-feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) in 2018, demonstrating ∼0.1 µW single-mode emission at 5.

Characterization of edge oscillation in a traveling-wave field-effect transistor.

In this study, we characterize the oscillating pulse edges developed in a traveling-wave field-effect transistor (TWFET). Recently, it has been found that a stable shock front can develop on a TWFET, which can travel in one direction only. Once the reflected pulse edge at the far end is transmitted to the input, the shock front develops and begins to travel on the device again.

External synchronization of oscillating pulse edge on a transmission line with regularly spaced tunnel diodes.

We investigate the external synchronization of the oscillating pulse edges developed in a transmission line periodically loaded with tunnel diodes (TDs), termed a TD line. It is observed that the pulse edge oscillates on a TD line when supplied by an appropriate voltage at the end of the line. We discuss how the pulse edge oscillates on a TD line and the properties of the external synchronization of the edge oscillation driven by a sinusoidal perturbation.