Multi-color emission from coaxial GaInN/GaN multiple-quantum-shell (MQS) nanowire-based light-emitting diodes (LEDs) was identified. In this study, MQS nanowire samples for LED processes were selectively grown on patterned commercial GaN/sapphire substrates using metal-organic chemical vapor deposition. Three electroluminescence (EL) emission peaks (440, 540, and 630 nm) were observed, which were primarily attributed to the nonpolar -planes, semipolar -planes, and the polar -plane tips of nanowire arrays.
View Article and Find Full Text PDFHere, we systematically investigated the growth conditions of an n-GaN cap layer for nanowire-based light emitters with a tunnel junction. Selective-area growth of multiple quantum shell (MQS)/nanowire core-shell structures on a patterned n-GaN/sapphire substrate was performed by metal-organic vapor phase epitaxy, followed by the growth of a p-GaN, an n/ p-GaN tunnel junction, and an n-GaN cap layer. Specifically, two-step growth of the n-GaN cap layer was carried out under various growth conditions to determine the optimal conditions for a flat n-GaN cap layer.
View Article and Find Full Text PDFLamb waves are normally utilized for inspecting thin metal sheets. Wheel type probes using piezoelectric oscillators have generally been used as the sensors for Lamb waves. Recently, the electromagnetic acoustic transducer (EMAT) has been developed and is beginning to be used as a Lamb wave detector.
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