Formation of Artificial Fermi Surfaces with a Triangular Superlattice on a Conventional Two-Dimensional Electron Gas.

Imposing an external periodic electrostatic potential to the electrons confined in a quantum well makes it possible to engineer synthetic two-dimensional band structures, with electronic properties different from those in the host semiconductor. Here we report the fabrication and study of a tunable triangular artificial lattice on a GaAs/AlGaAs heterostructure where it is possible to transform from the original GaAs band structure and a circular Fermi surface to a new band structure with multiple artificial Fermi surfaces simply by altering a gate bias. For weak electrostatic modulation magnetotransport measurements reveal multiple quantum oscillations and commensurability oscillations due to the electron scattering from the artificial lattice.

New signatures of the spin gap in quantum point contacts.

One dimensional semiconductor systems with strong spin-orbit interaction are both of fundamental interest and have potential applications to topological quantum computing. Applying a magnetic field can open a spin gap, a pre-requisite for Majorana zero modes. The spin gap is predicted to manifest as a field dependent dip on the first 1D conductance plateau.

Detection and Control of Spin-Orbit Interactions in a GaAs Hole Quantum Point Contact.

We investigate the relationship between the Zeeman interaction and the inversion-asymmetry-induced spin-orbit interactions (Rashba and Dresselhaus SOIs) in GaAs hole quantum point contacts. The presence of a strong SOI results in the crossing and anticrossing of adjacent spin-split hole subbands in a magnetic field. We demonstrate theoretically and experimentally that the anticrossing energy gap depends on the interplay between the SOI terms and the highly anisotropic hole g tensor and that this interplay can be tuned by selecting the crystal axis along which the current and magnetic field are aligned.

Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot.

Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the weak hyperfine interaction and strong spin-orbit interaction. However, it has only recently become possible to make stable quantum dots in these systems, mainly due to difficulties in device fabrication and stability.

Double-layer-gate architecture for few-hole GaAs quantum dots.

We report the fabrication of single and double hole quantum dots using a double-layer-gate design on an undoped accumulation mode [Formula: see text]/GaAs heterostructure. Electrical transport measurements of a single quantum dot show varying addition energies and clear excited states. In addition, the two-level-gate architecture can also be configured into a double quantum dot with tunable inter-dot coupling.

Strong and Tunable Spin-Orbit Coupling in a Two-Dimensional Hole Gas in Ionic-Liquid Gated Diamond Devices.

Hydrogen-terminated diamond possesses due to transfer doping a quasi-two-dimensional (2D) hole accumulation layer at the surface with a strong, Rashba-type spin-orbit coupling that arises from the highly asymmetric confinement potential. By modulating the hole concentration and thus the potential using an electrostatic gate with an ionic-liquid dielectric architecture the spin-orbit splitting can be tuned from 4.6-24.

Noncollinear paramagnetism of a GaAs two-dimensional hole system.

We have performed transport measurements in tilted magnetic fields in a two-dimensional hole system grown on the surface of a (311)A GaAs crystal. A striking asymmetry of Shubnikov-de Haas oscillations occurs upon reversing the in-plane component of the magnetic field along the low-symmetry [2[over ¯]33] axis. As usual, the magnetoconductance oscillations are symmetric with respect to reversal of the in-plane field component aligned with the high-symmetry [011[over ¯]] axis.

Spin-orbit interaction in a two-dimensional hole gas at the surface of hydrogenated diamond.

Hydrogenated diamond possesses a unique surface conductivity as a result of transfer doping by surface acceptors. Yet, despite being extensively studied for the past two decades, little is known about the system at low temperature, particularly whether a two-dimensional hole gas forms at the diamond surface. Here we report that (100) diamond, when functionalized with hydrogen, supports a p-type spin-3/2 two-dimensional surface conductivity with a spin-orbit interaction of 9.

Transport in disordered monolayer MoS2 nanoflakes--evidence for inhomogeneous charge transport.

We study charge transport in a monolayer MoS2 nanoflake over a wide range of carrier density, temperature and electric bias. We find that the transport is best described by a percolating picture in which the disorder breaks translational invariance, breaking the system up into a series of puddles, rather than previous pictures in which the disorder is treated as homogeneous and uniform. Our work provides insight to a unified picture of charge transport in monolayer MoS2 nanoflakes and contributes to the development of next-generation MoS2-based devices.

A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor.

We report a study of transport blockade features in a quantum dot single-electron transistor, based on an undoped AlGaAs/GaAs heterostructure. We observe suppression of transport through the ground state of the dot, as well as negative differential conductance at finite source-drain bias. The temperature and magnetic field dependences of these features indicate the couplings between the leads and the quantum dot states are suppressed.

Using a tunable quantum wire to measure the large out-of-plane spin splitting of quasi two-dimensional holes in a GaAs nanostructure.

The out-of-plane g-factor g([perpendicular])(*) for quasi two-dimensional (2D) holes in a (100) GaAs heterostructure is studied using a variable width quantum wire. A direct measurement of the Zeeman splitting is performed in a magnetic field applied perpendicular to the 2D plane. We measure an out-of-plane g-factor up to g([perpendicular])(*) = 5, which is larger than previous optical studies of g([perpendicular])(*) and is approaching the long predicted but never experimentally verified out-of-plane g-factor of 7.

Impact of small-angle scattering on ballistic transport in quantum dots.

Disorder increasingly affects performance as electronic devices are reduced in size. The ionized dopants used to populate a device with electrons are particularly problematic, leading to unpredictable changes in the behavior of devices such as quantum dots each time they are cooled for use. We show that a quantum dot can be used as a highly sensitive probe of changes in disorder potential and that, by removing the ionized dopants and populating the dot electrostatically, its electronic properties become reproducible with high fidelity after thermal cycling to room temperature.

Extreme sensitivity of the spin-splitting and 0.7 anomaly to confining potential in one-dimensional nanoelectronic devices.

Quantum point contacts (QPCs) have shown promise as nanoscale spin-selective components for spintronic applications and are of fundamental interest in the study of electron many-body effects such as the 0.7 × 2e(2)/h anomaly. We report on the dependence of the 1D Landé g-factor g and 0.

Observation of the Kondo effect in a spin-3/2 hole quantum dot.

We report the observation of Kondo physics in a spin-3/2 hole quantum dot. The dot is formed close to pinch-off in a hole quantum wire defined in an undoped AlGaAs/GaAs heterostructure. We clearly observe two distinctive hallmarks of quantum dot Kondo physics.

Resistively detected nuclear magnetic resonance in n- and p-type GaAs quantum point contacts.

We present resistively detected NMR measurements in induced and modulation-doped electron quantum point contacts, as well as induced hole quantum point contacts. While the magnitude of the resistance change and associated NMR peaks in n-type devices is in line with other recent measurements using this technique, the effect in p-type devices is too small to measure. This suggests that the hyperfine coupling between holes and nuclei in this type of device is much smaller than the electron hyperfine coupling, which could have implications in quantum information processing.

Piezoelectric rotator for studying quantum effects in semiconductor nanostructures at high magnetic fields and low temperatures.

We report the design and development of a piezoelectric sample rotation system, and its integration into an Oxford Instruments Kelvinox 100 dilution refrigerator, for orientation-dependent studies of quantum transport in semiconductor nanodevices at millikelvin temperatures in magnetic fields up to 10 T. Our apparatus allows for continuous in situ rotation of a device through >100° in two possible configurations. The first enables rotation of the field within the plane of the device, and the second allows the field to be rotated from in-plane to perpendicular to the device plane.

0.7 Structure and zero bias anomaly in ballistic hole quantum wires.

We study the anomalous conductance plateau around G=0.7(2e2/h) and the zero bias anomaly in ballistic hole quantum wires with respect to in-plane magnetic fields applied parallel B parallel and perpendicular B perpendicular to the quantum wire. As seen in electron quantum wires, the magnetic fields shift the 0.

Zeeman splitting in ballistic hole quantum wires.

We have studied the Zeeman splitting in ballistic hole quantum wires formed in a (311)A quantum well by surface gate confinement. Transport measurements clearly show lifting of the spin degeneracy and crossings of the subbands when an in-plane magnetic field B is applied parallel to the wire. When B is oriented perpendicular to the wire, no spin splitting is discernible up to B = 8.