Publications by authors named "Klaus Pierz"

The nonlinear response of a beam splitter to the coincident arrival of interacting particles enables numerous applications in quantum engineering and metrology. Yet, it poses considerable challenges to control interactions on the individual particle level. Here, we probe the coincidence correlations at a mesoscopic constriction between individual ballistic electrons in a system with unscreened Coulomb interactions and introduce concepts to quantify the associated parametric nonlinearity.

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The growth parameters for epitaxial growth of graphene on silicon carbide (SiC) have been the focus of research over the past few years. However, besides the standard growth parameters, the influence of the substrate pretreatment and properties of the underlying SiC wafer are critical parameters for optimizing the quality of monolayer graphene on SiC. In this systematic study, we show how the surface properties and the pretreatment determine the quality of monolayer graphene using polymer-assisted sublimation growth (PASG) on SiC.

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Comprehending far-from-equilibrium many-body interactions is one of the major goals of current ultrafast condensed matter physics research. Here, a particularly interesting but barely understood situation occurs during a strong optical excitation, where the electron and phonon systems can be significantly perturbed and the quasiparticle distributions cannot be described with equilibrium functions. In this work, we use time- and angle-resolved photoelectron spectroscopy to study such far-from-equilibrium many-body interactions for the prototypical material graphene.

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A new type of graphene-based quantum Hall standards is tested for electrical quantum metrology applications at alternating current (ac) and direct current (dc). The devices are functionalized with Cr(CO) to control the charge carrier density and have branched Hall contacts based on NbTiN superconducting material. The work is an in-depth study about the characteristic capacitances and related losses in the ac regime of the devices and about their performance during precision resistance measurements at dc and ac.

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We demonstrate the trapping of electrons propagating ballistically at far-above-equilibrium energies in GaAs/AlGaAs heterostructures in high magnetic field. We find low-loss transport along a gate-modified mesa edge in contrast to an effective decay of excess energy for the loop around a neighboring, mesa-confined node, enabling high-fidelity trapping. Measuring the full counting statistics via single-charge detection yields the trapping (and escape) probabilities of electrons scattered (and excited) within the node.

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Graphene, the first true two-dimensional material, still reveals the most remarkable transport properties among the growing class of two-dimensional materials. Although many studies have investigated fundamental scattering processes, the surprisingly large variation in the experimentally determined resistances is still an open issue. Here, we quantitatively investigate local transport properties of graphene prepared by polymer assisted sublimation growth using scanning tunneling potentiometry.

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Infrared scattering scanning near-field optical microscopy (IR s-SNOM) provides for spectroscopic imaging with nanometer spatial resolution, yet full spatio-spectral imaging is constrained by long measurement times. Here, we demonstrate the application of compressed sensing algorithms to achieve hyperspectral FTIR-based nano-imaging at an order of magnitude faster imaging speed to achieve the same spectral content compared to conventional approaches. At the example of the spectroscopy of a single vibrational resonance, we discuss the relationship of prior knowledge of sparseness of the employed Fourier base functions and sub-sampling.

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A main challenge in understanding the structure of a cell membrane and its interactions with drugs is the ability to chemically study the different molecular species on the nanoscale. We have achieved this for a model system consisting of mixed monolayers (MLs) of the biologically relevant phospholipid 1,2-distearoyl--glycero-phosphatidylcholine and the antibiotic surfactin. By employing nano-infrared (IR) microscopy and spectroscopy in combination with atomic force microscopy imaging, it was possible to identify and chemically detect domain formation of the two constituents as well as to obtain IR spectra of these species with a spatial resolution on the nanoscale.

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We report on the time-resolved detection of the anomalous velocity, constituting charge carriers moving perpendicular to an electric driving field, in undoped GaAs quantum wells. For this we optically excite the quantum wells with circularly polarized femtosecond laser pulses, thereby creating a state which breaks time-inversion symmetry. We then employ a quasi-single-cycle terahertz pulse as an electric driving field to induce the anomalous velocity.

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The electrical transport properties of epitaxial graphene layers are correlated with the SiC surface morphology. In this study we show by atomic force microscopy and Raman measurements that the surface morphology and the structure of the epitaxial graphene layers change significantly when different pretreatment procedures are applied to nearly on-axis 6H-SiC(0 0 0 1) substrates. It turns out that the often used hydrogen etching of the substrate is responsible for undesirable high macro-steps evolving during graphene growth.

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The on-demand generation and separation of entangled photon pairs are key components of quantum information processing in quantum optics. In an electronic analogue, the decomposition of electron pairs represents an essential building block for using the quantum state of ballistic electrons in electron quantum optics. The scattering of electrons has been used to probe the particle statistics of stochastic sources in Hanbury Brown and Twiss experiments and the recent advent of on-demand sources further offers the possibility to achieve indistinguishability between multiple sources in Hong-Ou-Mandel experiments.

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The future redefinition of the international system of units in terms of natural constants requires a robust, high-precision quantum standard for the electrical base unit ampere. However, the reliability of any single-electron current source generating a nominally quantized output current I=ef by delivering single electrons with charge e at a frequency f is eventually limited by the stochastic nature of the underlying quantum mechanical tunneling process. We experimentally explore a path to overcome this fundamental limitation by serially connecting clocked single-electron emitters with multiple in situ single-electron detectors.

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We advance spin noise spectroscopy to the ultimate limit of single spin detection. This technique enables the measurement of the spin dynamic of a single heavy hole localized in a flat (InGa)As quantum dot. Magnetic field and light intensity dependent studies reveal even at low magnetic fields a strong magnetic field dependence of the longitudinal heavy hole spin relaxation time with an extremely long T1 of ≥180  μs at 31 mT and 5 K.

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InAs quantum dots embedded in an AlAs matrix inside a double barrier resonant tunneling diode are investigated by cross-sectional scanning tunneling spectroscopy. The wave functions of the bound quantum dot states are spatially and energetically resolved. These bound states are known to be responsible for resonant tunneling phenomena in such quantum dot diodes.

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We report noninvasive single-charge detection of the full probability distribution P(n) of the initialization of a quantum dot with n electrons for rapid decoupling from an electron reservoir. We analyze the data in the context of a model for sequential tunneling pinch-off, which has generic solutions corresponding to two opposing mechanisms. One limit considers sequential "freeze-out" of an adiabatically evolving grand canonical distribution, the other one is an athermal limit equivalent to the solution of a generalized decay cascade model.

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It is demonstrated that the noninstantaneous response of the optically induced coherent polarization tremendously influences the real-space shift of electronic charges in semiconductors. The possibility of coherently controlling this real-space shift with temporally nonoverlapping excitation pulses allows for the observation of a new type of shift current, which only exists for certain polarization-shaped excitation pulses and vanishes in the continuous-wave limit. In contrast to previously studied shift currents, the new current requires a phase mismatch between two orthogonal transition dipole moments and leads, within a nonlinear second-order description, to a tensor which is antisymmetric with respect to the order of the two exciting electric field amplitudes.

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