Metal-insulator transition effect on Graphene/VO[Formula: see text] heterostructure via temperature-dependent Raman spectroscopy and resistivity measurement.

High-quality VO[Formula: see text] films were fabricated on top of c-Al[Formula: see text]O[Formula: see text] substrates using Reactive Bias Target Ion Beam Deposition (RBTIBD) and the studies of graphene/VO[Formula: see text] heterostructure were conducted. Graphene layers were placed on top of [Formula: see text] 50 and [Formula: see text] 100 nm VO[Formula: see text]. The graphene layers were introduced using mechanical exfoliate and CVD graphene wet-transfer method to prevent the worsening crystallinity of VO[Formula: see text], to avoid the strain effect from lattice mismatch and to study how VO[Formula: see text] can affect the graphene layer.