Two-Photon-Excited FLIM of NAD(P)H and FAD-Metabolic Activity of Fibroblasts for the Diagnostics of Osteoimplant Survival.

Bioinert materials such as the zirconium dioxide and aluminum oxide are widely used in surgery and dentistry due to the absence of cytotoxicity of the materials in relation to the surrounding cells of the body. However, little attention has been paid to the study of metabolic processes occurring at the implant-cell interface. The metabolic activity of mouse 3T3 fibroblasts incubated on yttrium-stabilized zirconium ceramics cured with aluminum oxide (ATZ) and stabilized zirconium ceramics (Y-TZP) was analyzed based on the ratio of the free/bound forms of cofactors NAD(P)H and FAD obtained using two-photon microscopy.

Silicon-Based Avalanche Photodiodes: Advancements and Applications in Medical Imaging.

Avalanche photodiodes have emerged as a promising technology with significant potential for various medical applications. This article presents an overview of the advancements and applications of avalanche photodiodes in the field of medical imaging. Avalanche photodiodes offer distinct advantages over traditional photodetectors, including a higher responsivity, faster response times, and superior signal-to-noise ratios.

Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface.

This paper presents the results of studying the processes of epitaxial growth of germanium on silicon with crystallographic orientation (111) in a wide temperature range. The temperature dependences of the duration of the transition stage from the 7 × 7 to 5 × 5 superstructure and the values of the critical thickness of the transition from two-dimensional to three-dimensional growth in the range from 250 to 700 °C are determined using the reflection high-energy electron diffraction method. It was shown for the first time that the transition time from the 7 × 7 superstructure to 5 × 5 superstructure depends on the temperature of epitaxial growth.

Single-Element 2D Materials beyond Graphene: Methods of Epitaxial Synthesis.

Today, two-dimensional materials are one of the key research topics for scientists around the world. Interest in 2D materials is not surprising because, thanks to their remarkable mechanical, thermal, electrical, magnetic, and optical properties, they promise to revolutionize electronics. The unique properties of graphene-like 2D materials give them the potential to create completely new types of devices for functional electronics, nanophotonics, and quantum technologies.

High-resolution RHEED analysis of dynamics of low-temperature superstructure transitions in Ge/Si(001) epitaxial system.

In this paper, we analyze superstructural transitions during epitaxial growth of two-dimensional layers and the formation of quantum dots by the Stranski-Krastanov mechanism in elastically stressed systems by the reflection high-energy electron diffraction method. Detailed dependences of the periodicity parameterof the 2 × reconstruction on the effective thickness of the deposited material in a wide range of growth temperatures during epitaxy of germanium on a silicon surface with a crystallographic orientation (001) are obtained. Superstructural transitions and the change in the value of the parameterat low temperatures of epitaxy in this system have been investigated for the first time.

Thickness-dependent elastic strain in Stranski-Krastanow growth.

In this paper, we comprehensively consider the effect of the dependence of elastic strain on the thickness of deposited material on the formation of two-dimensional layers and quantum dots by the Stranski-Krastanow mechanism. The nucleation and growth of germanium quantum dots on silicon surface (100) are used as a model system for conducting experimental studies and theoretical calculations. A detailed dependence of the value of elastic strains on the effective thickness of deposited germanium is obtained.

Generalized Muller-Kern formula for equilibrium thickness of a wetting layer with respect to the dependence of the surface energy of island facets on the thickness of the 2D layer.

Experimental results indicate a particular importance of such a value as the equilibrium thickness of the wetting layer during epitaxial growth according to the Stranski-Krastanow mechanism in systems with a lattice mismatch. In this paper the change in free energy during the transition of atoms from the wetting layer to the island in such systems is considered. Recent experimental results also show that the surface energy of the island's facets depends upon the thickness of the deposited material.