A van der Waals Heterostructure with an Electronically Textured Moiré Pattern: PtSe/PtTe.

The interlayer interaction in Pt-dichalcogenides strongly affects their electronic structures. The modulations of the interlayer atom-coordination in vertical heterostructures based on these materials are expected to laterally modify these interlayer interactions and thus provide an opportunity to texture the electronic structure. To determine the effects of local variation of the interlayer atom coordination on the electronic structure of PtSe, van der Waals heterostructures of PtSe and PtTe have been synthesized by molecular beam epitaxy.

Formation of In-Plane Semiconductor-Metal Contacts in 2D Platinum Telluride by Converting PtTe to PtTe.

Monolayer PtTe is a narrow gap semiconductor while PtTe is a metal. Here we show that the former can be transformed into the latter by reaction with vapor-deposited Pt atoms. The transformation occurs by nucleating the PtTe phase within PtTe islands, so that a metal-semiconductor junction is formed.

Controlling Stoichiometry in Ultrathin van der Waals Films: PtTe, PtTe, PtTe, and PtTe.

The platinum-tellurium phase diagram exhibits various (meta)stable van der Waals (vdW) materials that can be constructed by stacking PtTe and PtTe layers. Monophase PtTe, being the thermodynamically most stable compound, can readily be grown as thin films. Obtaining the other phases (PtTe, PtTe, PtTe), especially in their ultimate thin form, is significantly more challenging.

Molecular Beam Epitaxy of Transition Metal (Ti-, V-, and Cr-) Tellurides: From Monolayer Ditellurides to Multilayer Self-Intercalation Compounds.

Material growth by van der Waals epitaxy has the potential to isolate monolayer (ML) materials and synthesize ultrathin films not easily prepared by exfoliation or other growth methods. Here, the synthesis of the early transition metal (Ti, V, and Cr) tellurides by molecular beam epitaxy (MBE) in the mono- to few-layer regime is investigated. The layered ditellurides of these materials are known for their intriguing quantum- and layer dependent- properties.

Monolayer Modification of VTe and Its Charge Density Wave.

Interlayer interactions in layered transition metal dichalcogenides are known to be important for describing their electronic properties. Here, we demonstrate that the absence of interlayer coupling in monolayer VTe also causes their structural modification from a distorted 1T' structure in bulk and multilayer samples to a hexagonal 1T structure in the monolayer. X-ray photoemission spectroscopy indicates that this structural transition is associated with electron transfer from the vanadium d bands to the tellurium atoms for the monolayer.