Recrystallization by annealing in SiC amorphized with Ne irradiation.

Alpha-silicon carbide was irradiated with Ne+ ions at room temperature to various fluences up to 7.5 x 10(20) Ne+ m(-2) and then isochronally annealed under observation with a transmission electron microscope. In all cases, thin regions were completely amorphized by irradiation and epitaxial growth occurred from the residual crystalline region by subsequent annealing.