ZnO nanowire-based nonvolatile memory devices with Al2O3 layers as storage nodes.

Top-gate ZnO nanowire field-effect transistors (FETs) with Al2O3 gate dielectric layers as storage nodes were fabricated and their memory effects were characterized in this work. The Al2O3 layers deposited on the ZnO nanowire channels were utilized not only as gate dielectric ones but also as charge trapping ones. For a representative top-gate ZnO nanowire FET, its I(DS)-V(GS) characteristics for the double sweep of the gate voltages exhibit the counterclockwise hysteresis and the threshold voltage shift.

Fabrication and device characterization of omega-shaped-gate ZnO nanowire field-effect transistors.

Omega-shaped-gate (OSG) nanowire-based field effect transistors (FETs) have attracted a great deal of attention recently, because theoretical simulations predicted that they should have a higher device performance than nanowire-based FETs with other gate geometries. OSG FETs with channels composed of ZnO nanowires were successfully fabricated in this study using photolithographic processes. In the OSG FETs fabricated on oxidized Si substrates, the channels composed of ZnO nanowires with diameters of about 110 nm are coated with Al(2)O(3) using atomic layer deposition, which surrounds the channels and acts as a gate dielectric.